X-On Electronics has gained recognition as a prominent supplier of NTE6400 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE6400 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE6400 NTE

NTE6400 electronic component of NTE
NTE6400 NTE
NTE6400 MOSFETs
NTE6400  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE6400
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: UJT; unipolar; 450mW; TO39
Datasheet: NTE6400 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 57.232 ea
Line Total: USD 57.23 
Availability - 9
Ship by Fri. 18 Jul to Tue. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 18 Jul to Tue. 22 Jul
MOQ : 1
Multiples : 1
1 : USD 57.232
3 : USD 56.168

   
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Valley Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE6400 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE6400 and other electronic components in the MOSFETs category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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NTE6400 & NTE6400A Unijunction Transistor TO39 Type Package Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable N type negative resistance characteristic over a wide temperature range. A stable peak point volt- age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators, timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven- tional silicon or germanium transistors. These devices are intended for applications where circuit economy is of primary importance. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A RMS Power Dissipation, P D Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9mW/C RMS Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA E Peak Emitter Current (T = +150C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A J E(peak) Emitter Reverse Voltage (T = +150C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V J Interbase Voltage, V BB NTE6400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V NTE6400A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Operating Temperature Range, T opr Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +140C Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16C/mW thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Intrinsic Standoff Ratio V = 10V, Note 1 BB NTE6400 0.4 0.80 NTE6400A 0.54 0.67 Interbase Resistance R V = 3V, I = 0, Note 1 4 12 k BBO BB E Modulated Interbase Current I V = 10V, I = 50mA 6.8 30 mA B2(MOD) BB E Emitter Reverse Current I V = 30V, I = 0 A EO B2E B1 NTE6400 12 NTE6400A 1 Peak Point Emitter Current I V = 25V 25 A P BB Valley Point Current I 8 mA V = 20V, R = 100 V BB B2 BaseOne Peak Pulse Voltage V 3 V OB1 Rev. 510Note 1. The intristic standoff ratio, , is essentially constant with temperature and interbase volt- age. It is defined by the following equation: 200 V = V + P BB T j Where V = Peak point emitter voltage P V = Interbase voltage BB T = Junction Temperature (Degrees Kelvin) j Note 2. The interbase resistance is nearly ohmic and increases with temperature in a welldefined manner. The temperature coefficient at +25C is approximately 0.8%/C. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia .210 (5.33) Dia Max B2 B1 45 Emitter .031 (.793)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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