NTE2393 MOSFET NChannel Enhancement Mode, High Speed Switch TO3P Type Package Description: The NTE2393 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 500V for OffLine SMPS High Current: 9A for up to 350W SMPS Ultra Fast Switching for Operation at less than 100kHz G Industrial Applications: Switching Mode Power Supplies S Motor Controls Absolute Maximum Ratings: DrainSource Voltage (V = 0), V ................................................ 500V GS DS DrainGate Voltage (R = 20k ), V ............................................. 500V GS DGR GateSource Voltage, V ......................................................... 20V GS Continuous Drain Current, I D T = +25 C ................................................................... 9A C T = +100 C ................................................................ 5.6A C Pulsed Drain Current (Note 1), I ................................................... 36A DM Clamped Drain Inductive Current (Note 1), I ........................................ 36A DLM Total Dissipation (T = +25 C), P ................................................. 150W C tot Derate Above 25 C ....................................................... 1.2W/ C Maximum Operating Junction Temperature, T ...................................... +150 C J Storage Temperature Range, T .......................................... 65 to +150 C stg Maximum Thermal Resistance, Junction toCase, R ........................... 0.83 C/W thJC Maximum Lead Temperature (During Soldering), T ................................. +275 C L Note 1. Pulse width limited by safe operating area. Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V I = 250 A, V = 0 500 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = Max Rating 250 A DSS GS DS V = 0, V = 400V, 1000 A GS DS T = +125 C C GateBody Leakage Current I V = 0, V = 20V 100 nA GSS DS GS ON Characteristics (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2 4 V GS(th) DS GS D Static Drain Source On Resistance R V = 10V, I = 4.5A 0.7 DS(on) GS D V = 10V, I = 4.5A, 1.4 GS D T = 100 C C Dynamic Characteristics Forward Transconductance g V = 25V, I = 4.5A 5 mho fs DS D Input Capacitance C V = 25V, V = 0, 1600 1900 pf iss DS GS f = 1MHz Output Capacitance C 280 pf oss Reverse Transfer Capacitance C 170 pf rss Switching Characteristics TurnOn Time t V = 250V, I = 4.5A, 30 40 ns d(on) DD D R = 4.7 V = 10V I I Rise Time t 40 60 ns r TurnOff Delay Time t 130 170 ns d(off) Fall Time t 30 40 ns f Source Drain Diode Characteristics SourceDrain Current I 9 A SD SourceDrain Current (Pulsed) I Note 2 36 A SDM Forward ON Voltage V I = 9A, V = 0 1.15 V SD SD GS Reverse Recovery Time t I = 9A, V = 0, 420 ns rr DS GS di/dt = 100A/ s Note 2. Pulse width limited by safe operating area. Note 3. Pulsed: Pulse Duration = 300 s, Duty Cycle 1.5%