NTE2384 MOSFET NChannel Enhancement Mode, High Speed Switch TO3 Type Package Absolute Maximum Ratings: DrainSource Voltage (T = +25 to +150 C), V .................................... 900V J DSS DrainGate Voltage (T = +25 to +150 C, R = 1M ), V .......................... 900V J GS DGR GateSource Voltage, V GS Continuous ................................................................. 20V Transient ................................................................... 30V Drain Current (T = +25 C), I C D Continuous ................................................................... 6A Pulsed (T = +150 C) ........................................................ 24A JM Total Dissipation (T = +25 C), P ................................................. 180W C tot Operating Junction Temperature Range, T .................................. 55 to +150 C J Maximum Operating Junction Temperature, T ..................................... +150 C JM Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Thermal Resistance, Junction toCase, R ............................. 0.7K/W thJC Typical Thermal Resistance, Junction toAmbient, R ............................ 0.25K/W thJA Lead Temperature (During Soldering, 1.6mm from Case, 10sec), T ................... +300 C L Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DrainSource Breakdown Voltage V I = 3mA, V = 0 900 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = 640V, T = +25 C 250 A DSS GS DS J V = 0, V = 640V, T = +125 C 1.0 mA GS DS J GateBody Leakage Current I V = 0, V = 20V 100 nA GSS DS GS Gate Threshold Voltage V V = V , I = 250 A 2.0 4.5 V GS(th) DS GS D Static DrainSource On Resistance R V = 10V, I = 3A, Note 1 1.4 DS(on) GS D Dynamic Characteristics Forward Transconductance g V = 10V, I = 3A, Pulse Test 4 6 S fs DS D Input Capacitance C V = 25V, V = 0, f = 1MHz 2600 pf iss DS GS Output Capacitance C 180 pf oss Reverse Transfer Capacitance C 45 pf rss TurnOn Time t V = 10V, V = 450V, I = 3A, 35 100 ns d(on) GS DS D R = 4.7 (External) G Rise Time t 40 110 ns r TurnOff Delay Time t 100 200 ns d(off) Fall Time t 60 100 ns f Note 1. Pulse test, t 300 s, duty cycle d 2%. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics (Contd) Total Gate Charge Q V = 10V, V = 450V, I = 3A 88 130 nC g(on) GS DS D GateSource Charge Q 21 30 nC gs GateDrain Charge Q 38 70 nC gd SourceDrain Diode Ratings and Characteristics Continuous Reverse Drain Current I V = 0 6 A DR GS Pulsed Reverse Drain Current I T = +150 C 24 A DRM JM Diode Forward Voltage V I = I , V = 0, Note 1 1.5 V SD F DR GS Reverse Recovery Time t I = I , di/dt = 100A/ s, 900 ns rr F DR V = 100V R Note 1. Pulse test, t 300 s, duty cycle d 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane D .312 (7.93) Min .040 (1.02) Case G S Source 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Gate Drain/Case