NTE2386 MOSFET NChannel Enhancemen Mode, High Speed Switch TO3 Type Package Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. Features: Repetitive Avalanche Ratings D Dynamic dv/dt Rating Case Simple Drive Requirements G S Ease of Paralleling Absolute Maximum Ratings: Continuous Drain Current, I D (T = +25 C) ............................................................... 6.2A C (T = +100 C) .............................................................. 2.8A C Pulsed Drain Current (Note 1), I ................................................... 25A DM Maximum Power Dissipation (T = +25 C), P ....................................... 125W C D (Derate linearly above +25 C) ............................................. 1.0W/ C GatetoSource Voltage, V ...................................................... 20V GS Single Pulse Avalanche Energy (Note 2), E ....................................... 670mJ AS Avalanche Current (Repetitive or Non Repetitive, Note 1), I .......................... 6.2A AR Repetitive Avalanche Energy (Note 1), E .......................................... 13mJ AR Peak Diode Recovery (Note 3), dv/dt ............................................. 3.0V/mS Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case for 10s), T .......... +300 C L Rev. 1213Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Breakdown Voltage BV V = 0V, I = 250 A 600 V DSS GS D DraintoSource Static DraintoSource R V = 10V, I = 3.4A, Note 4 0.97 1.2 DS(on) GS D OnState Resistance OnState Drain Current I V > I (on) x R (on) Max, 6.2 A D(on) DS D DS V = 10V, Note 4 GS Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(HL) DS GS D Forward Transconductance gs V = 60V, I = 3.4A, Note 4 4.7 70 mhos DS DC V = Max. Rating V = 0V 250 Zero Gate Voltage Drain Current I A DSS DS CS V = 0.8 x Max Rating , V = 0V, 1000 DS SS T = 125 C J Forward Leakage Current I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage Current I V = 20V 100 nA GSS GS GatetoSource Total Gate Charge Q 4.0 80 nC g V = 10V, I = 6.2A, GS D GatetoSource Charge Qgs 6.5 8.2 nC V = 0.8 x Max Rating DS (independent of operating temperature) GatetoDrain (Miller) Charge Qgd 20 30 nC TurnOn Delay Time t 1.3 20 ns d(on) V = 300V, f = 6.2A, Rise Time t 18 27 DD D r R = 9.1 R = 47 G D TurnOff Delay Time t 65 83 d(off) (independent at operating temperature) Fall Time t 20 20 f Internal Drain Inductance L Measured from the drain lead, 6mm 5.0 nH D (0.25 In) from packaged to center of die. Internal Source Inductance L Measured from the source lead, 6mm 18 S (0.25 in) from package to source bonding pad. Input Capacitance C V = 0V, V = 25V, f = 1.0MHz 1300 pF iss GS DS Output Capacitance C 150 oss Reverse Transfer Capacitance C 30 rss SourceDrain Diode Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current I 6.2 A S (Body Diode) Pulsed Source Current I Note 1 26 A SM (Body Diode) Diode Forward Voltage V T = 25 C, I = 6.2A, V = 0V, Note 4 1.5 V SO J S GS Reverse Recovery Time t T = 25 C, I = 6.2A 1.8 3.6 7.9 C rr J F di/dt = 100A/ s Forward TurnOn Time t Intrinsic turnon time is negligible Turn on speed is substantially on controlled by L + L S D