NTE2302 Silicon NPN Transistor w Color TV Horizontal Deflection Output /Damper Diode Features: High Breakdown Voltage and High Reliability High Switching Speed Capable of Being Mounted in a Variety of Methods Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 800V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 40 130 mA EBO EB C DC Current Gain h V = 5V, I = 1A 8 FE CE C Current GainBandwidth Product f V = 10V, I = 1A 3 MHz T CE C CollectorEmitter Saturation Voltage V I = 4A, I = 0.8A 5.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 4A, I = 0.8A 1.5 V BE(sat) C B CollectorBase Breakdown Voltage V I = 5mA, I = 0 1500 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 100mA, R = 800 V (BR)CBO C BE EmitterBase Breakdown Voltage V I = 200mA, I = 0 7 V (BR)EBO E C Diode Forward Voltage V I = 5A 2 V F EC Fall Time t V = 200V, I = 4A, I = 0.8A, 0.7 s f CC C B1 I = 1.6A, R = 50 B2 L.190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)