NTE225 Silicon NPN Transistor Linear Amplifier and High Speed Switch Description: The NTE225 is a silicon NPN transistor in a TO39 type package (with flange) designed for industrial and commercial equipment. Typical applications include high voltage differential and operational am- plifiers, high voltage inverters, and high voltage, low current switching and series regulators. Features: High Voltage Rating: V = 350V Max. CEO(sus) Low Saturation Voltage Absolute Maximum Ratings: Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V CBO Collector Emitter Sustaining Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V CEO(sus) EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C D Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5 C/W thJC Lead Temperature (During Soldering, 1/32 from seating plane for 10sec Max, T . . . . . . . +255 C L Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 50mA, I = 0, Base Open, Note 1 350 V CEO(sus) C B Collector Cutoff Current I V = 300V, I = 0 20 A CEO CE B I V = 450V, V = 1.5V 500 A CEV CE BE Emitter Cutoff Current I V = 6V, I = 0 20 A EBO BE C DC Current Gain h V = 10V, I = 20mA 40 160 FE CE C V = 10V, I = 2mA 30 CE C CollectorEmitter Saturation Voltage V I = 50mA, I = 4mA 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 50mA, I = 4mA 1.3 V BE(sat) C B SmallSignal Current Gain h V = 10V, I = 10mA, f = 5MHz 3 fe CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 10 pF ob CB E Second Breakdown Collector Current I V = 200V, with Base Forward Biased 50 mA S/b CE Note 1. The sustaining voltage (V ) MUST NOT be measured on a curve tracer. CEO(sus).370 (9.39) Dia Max .315 .065 (1.68) (8.0) .143 (3.65) Min .019 (0.48) Dia Base Collector/Case Emitter .500 (12.7) .190 (4.82) .630 (16.0) 1.000 (25.4)