MOSFET Power, N-Channel, Logic Level 100 V, 23 A, 56 m NTD6415ANL, NVD6415ANL Features Low R DS(on) www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring V R MAX I MAX (BR)DSS DS(on) D Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 56 m 4.5 V 100 V 23 A These Devices are PbFree and are RoHS Compliant 52 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J D Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS GatetoSource Voltage Continuous V 20 V GS G Continuous Drain Steady T = 25C I 23 A D C Current State T = 100C 16 C S Power Dissipation Steady T = 25C P 83 W C D State 4 Pulsed Drain Current t = 10 s I 80 A p DM 2 1 Operating and Storage Temperature Range T , T 55 to C J stg 3 +175 DPAK Source Current (Body Diode) I 23 A CASE 369AA S STYLE 2 Single Pulse DraintoSource Avalanche E 79 mJ AS Energy (V = 50 Vdc, V = 10 Vdc, I = DD GS L(pk) 23 A, L = 0.3 mH, R = 25 ) G MARKING DIAGRAM Lead Temperature for Soldering T 260 C & PIN ASSIGNMENT L Purposes, 1/8 from Case for 10 Seconds 4 Drain THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoCase (Drain) Steady State R 1.8 C/W JC 1 3 JunctiontoAmbient Steady State (Note 1) R 49 JA 2 Gate Source Stresses exceeding those listed in the Maximum Ratings table may damage the Drain device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A = Assembly Location* 1. Surface mounted on FR4 board using 1 sq in pad size, 6415ANL = Device Code (Cu Area 1.127 sq in 2 oz including traces). Y = Year WW = Work Week G = PbFree Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2020 Rev. 6 NTD6415ANL/D AYWW 64 15ANLGNTD6415ANL, NVD6415ANL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D V = 0 V, I = 250 A, T = 40C 92 GS D J DraintoSource Breakdown Voltage V /T 115 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 1.0 2.0 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature V /T 4.8 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 4.5 V, I = 10 A 44 56 m DS(on) GS D V = 10 V, I = 10 A 43 52 GS D Forward Transconductance g V = 5.0 V, I = 10 A 24 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1024 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 156 OSS GS DS Reverse Transfer Capacitance C 70 RSS nC Total Gate Charge Q 20 G(TOT) Threshold Gate Charge Q 1.1 G(TH) V = 4.5 V, V = 80 V, I = 23 A GS DS D GatetoSource Charge Q 3.1 GS GatetoDrain Charge Q 14 GD Total Gate Charge Q V = 10 V, V = 80 V, I = 23 A 35 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 11 ns d(on) Rise Time t 91 r V = 4.5 V, V = 80 V, GS DD I = 23 A, R = 6.1 TurnOff Delay Time t D G 40 d(off) Fall Time t 71 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, I = 23 A GS S T = 125C 0.74 J Reverse Recovery Time t 64 ns RR Charge Time T 40 a V = 0 V, dI /dt = 100 A/ s, GS S I = 23 A S Discharge Time T 24 b Reverse Recovery Charge Q 152 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD6415ANLT4G DPAK NVD6415ANLT4G 2500 / Tape & Reel (PbFree) NVD6415ANLT4GVF01 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 2