NTD20N06, NTDV20N06 Power MOSFET 20 A, 60 V, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R DS(on) Lower V DS(on) www.onsemi.com Lower Capacitances Lower Total Gate Charge V R TYP I MAX (BR)DSS DS(on) D Lower and Tighter V SD 60 V 20 A 37.5 m Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NChannel NTDV Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant G Typical Applications Power Supplies S Converters Power Motor Controls 4 Bridge Circuits MAXIMUM RATINGS (T = 25C unless otherwise noted) 2 J 1 3 Rating Symbol Value Unit DPAK DraintoSource Voltage V 60 Vdc DSS CASE 369C DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR STYLE 2 GatetoSource Voltage Vdc Continuous V 20 GS MARKING DIAGRAM Nonrepetitive (t 10 ms) V 30 p GS & PIN ASSIGNMENTS Drain Current Adc 4 Continuous T = 25C I 20 A D Drain Continuous T = 100C I 10 A D Single Pulse (t 10 s) I 60 Apk p DM Total Power Dissipation T = 25C P 60 W A D Derate above 25C 0.40 W/C Total Power Dissipation T = 25C (Note 1) 1.88 W A Total Power Dissipation T = 25C (Note 2) 1.36 W A 2 Operating and Storage Temperature Range T , T 55 to C J stg 1 3 Drain 175 Gate Source Single Pulse DraintoSource Avalanche E 170 mJ AS Energy Starting T = 25C A = Assembly Location* J (V = 25 Vdc, V = 10 Vdc, DD GS 20N06 = Device Code L = 1.0 mH, I (pk) = 18.4 A, V = 60 Vdc) L DS Y = Year WW = Work Week Thermal Resistance C/W G = PbFree Package JunctiontoCase R 2.5 JC JunctiontoAmbient (Note 1) R 80 JA * The Assembly Location code (A) is front side JunctiontoAmbient (Note 2) R 110 JA optional. In cases where the Assembly Location is Maximum Lead Temperature for Soldering T 260 C L stamped in the package, the front side assembly Purposes, 1/8 from case for 10 seconds code may be blank. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 2 of 1. When surface mounted to an FR4 board using the minimum recommended this data sheet. pad size. 2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2017 Rev. 10 NTD20N06/D AYWW 20 N06GNTD20N06, NTDV20N06 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 71.7 GS D Temperature Coefficient (Positive) 79.4 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) 2.0 2.91 4.0 (V = V , I = 250 Adc) DS GS D Threshold Temperature Coefficient (Negative) 6.9 mV/C Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 10 Vdc, I = 10 Adc) 37.5 46 GS D Static DraintoSource OnVoltage (Note 3) V Vdc DS(on) (V = 10 Vdc, I = 20 Adc) 0.78 1.10 GS D (V = 10 Vdc, I = 10 Adc, T = 150C) 1.57 GS D J Forward Transconductance (Note 3) (V = 7.0 Vdc, I = 6.0 Adc) g 13.2 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 725 1015 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 213 300 oss f = 1.0 MHz) Transfer Capacitance C 58 120 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.5 20 ns d(on) (V = 30 Vdc, I = 20 Adc, Rise Time DD D t 60.5 120 r V = 10 Vdc, GS TurnOff Delay Time t 27.1 60 d(off) R = 9.1 ) (Note 3) G Fall Time t 37.1 80 f Gate Charge Q 21.2 30 nC T (V = 48 Vdc, I = 20 Adc, DS D Q 5.6 1 V = 10 Vdc) (Note 3) GS Q 7.3 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 20 Adc, V = 0 Vdc) (Note 3) V 1.0 1.2 Vdc S GS SD (I = 20 Adc, V = 0 Vdc, T = 150C) 0.87 S GS J Reverse Recovery Time t 42.9 ns rr (I = 20 Adc, V = 0 Vdc, S GS t 33 a dI /dt = 100 A/ s) (Note 3) S t 9.9 b Reverse Recovery Stored Charge Q 0.084 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD20N06T4G DPAK NTDV20N06T4G 2500 / Tape & Reel (PbFree) NTDV20N06T4GVF01 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2