ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single NChannel, DPAK Features Low R DS(on) High Current Capability www.onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring V R MAX I MAX (BR)DSS DS(on) D Unique Site and Control Change Requirements AECQ101 16 m 5.0 V Qualified and PPAP Capable 40 V 51 A 9.5 m 10 V These Devices are PbFree and are RoHS Compliant D Applications LED Backlight Driver CCFL Backlight NChannel DC Motor Control G Power Supply Secondary Side Synchronous Rectification S MAXIMUM RATINGS (T = 25C unless otherwise noted) J 4 Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS 2 1 3 GatetoSource Voltage Continuous V 20 V GS DPAK GatetoSource Voltage V 30 V GS CASE 369C NonRepetitive (t < 10 S) p (Surface Mount) Continuous Drain T = 25C I 51 A C D STYLE 2 Current (R ) JC Steady T = 100C 36 (Note 1) C MARKING DIAGRAM State Power Dissipation T = 25C P 47 W & PIN ASSIGNMENT C D (R ) (Note 1) JC 4 Pulsed Drain Current I 85 A t = 10 s Drain p DM Operating Junction and Storage Temperature T , T 55 to C J stg 175 Source Current (Body Diode) I 30 A S Single Pulse DraintoSource Avalanche E 80 mJ AS 2 Energy (V = 50 V, V = 10 V, R = 25 , DD GS G Drain 1 3 I = 40 A, L = 0.1 mH, V = 40 V) L(pk) DS Gate Source Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) A = Assembly Location* Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. 5805N = Device Code G = PbFree Package THERMAL RESISTANCE MAXIMUM RATINGS * The Assembly Location Code (A) is front side Parameter Symbol Value Unit optional. In cases where the Assembly Location is JunctiontoCase (Drain) R 3.2 C/W JC stamped in the package bottom (molding ejecter JunctiontoAmbient Steady State (Note 1) R 107 pin), the front side assembly code may be blank. JA 1. Surfacemounted on FR4 board using the minimum recommended pad size. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2017 Rev. 6 NTD5805N/D AYWW 58 05NG