X-On Electronics has gained recognition as a prominent supplier of NTF5P03T3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTF5P03T3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTF5P03T3G ON Semiconductor

NTF5P03T3G electronic component of ON Semiconductor
NTF5P03T3G ON Semiconductor
NTF5P03T3G MOSFETs
NTF5P03T3G  Semiconductors

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See Product Specifications
Part No. NTF5P03T3G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET 30V 5.2A P-Channel
Datasheet: NTF5P03T3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7138 ea
Line Total: USD 0.71 
Availability - 34695
Ship by Tue. 04 Feb to Thu. 06 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ : 1000
Multiples : 1000
1000 : USD 0.4981
4000 : USD 0.4439
8000 : USD 0.4416
12000 : USD 0.4395
16000 : USD 0.4372
28000 : USD 0.4351

5436
Ship by Thu. 13 Feb to Tue. 18 Feb
MOQ : 1
Multiples : 1
1 : USD 1.4218
10 : USD 1.1471
30 : USD 0.8655
100 : USD 0.6731
500 : USD 0.5727
1000 : USD 0.5392
2000 : USD 0.5335

34695
Ship by Tue. 04 Feb to Thu. 06 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7138
10 : USD 0.705
100 : USD 0.4983
500 : USD 0.4466
1000 : USD 0.4224
2000 : USD 0.4169
4000 : USD 0.4004
8000 : USD 0.3993
24000 : USD 0.3916

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the NTF5P03T3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTF5P03T3G and other electronic components in the MOSFETs category and beyond.

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NTF5P03, NVF5P03 MOSFET Power, P-Channel, SOT-223 -5.2 A, -30 V Features NTF5P03, NVF5P03 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Negative sign for PChannel devices omitted for clarity Rating Symbol Max Unit DraintoSource Voltage V 30 V DSS DraintoGate Voltage (R = 1.0 M ) V 30 V GS DGR GatetoSource Voltage Continuous V 20 V GS 1 sq in Thermal Resistance Junction to Ambient R 40 C/W THJA FR4 or G10 PCB Total Power Dissipation T = 25C P 3.13 Watts A D Linear Derating Factor 25 mW/C Drain Current Continuous T = 25C I 5.2 A A D 10 seconds Continuous T = 70C I 4.1 A A D Pulsed Drain Current (Note 1) I 26 A DM Minimum Thermal Resistance Junction to Ambient R 80 C/W THJA FR4 or G10 PCB P 1.56 Watts Total Power Dissipation T = 25C D A 12.5 mW/C Linear Derating Factor I 3.7 A D Drain Current Continuous T = 25C A 10 seconds I 2.9 A D Continuous T = 70C A I 19 A DM Pulsed Drain Current (Note 1) Operating and Storage Temperature Range T , T 55 to 150 C J stg Single Pulse DraintoSource Avalanche Energy Starting T = 25C E mJ J AS 250 (V = 30 Vdc, V = 10 Vdc, Peak I = 12 Apk, L = 3.5 mH, R = 25 ) DD GS L G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Repetitive rating pulse width limited by maximum junction temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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