X-On Electronics has gained recognition as a prominent supplier of NTDV20P06LT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTDV20P06LT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTDV20P06LT4G ON Semiconductor

NTDV20P06LT4G electronic component of ON Semiconductor
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Part No.NTDV20P06LT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET PFET 60V 15.5A 130R
Datasheet: NTDV20P06LT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0

Multiples : 867
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.12
10 : USD 1.069
100 : USD 0.809
500 : USD 0.7053
1000 : USD 0.5928
2500 : USD 0.5727
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NTDV20P06LT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTDV20P06LT4G and other electronic components in the MOSFETs category and beyond.

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NTD20P06L, NTDV20P06L MOSFET Power, Single, P-Channel, DPAK -60 V, -15.5 A Features www.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching I MAX D AEC Q101 Qualified NTDV20P06L V R TYP (Note 1) (BR)DSS DS(on) These Devices are PbFree and are RoHS Compliant 60 V 130 m 5.0 V 15.5 A Applications Bridge Circuits PChannel Power Supplies, Power Motor Controls D DCDC Conversion MAXIMUM RATINGS (T = 25C unless otherwise noted) J G Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS S GatetoSource Continuous V 20 V GS Voltage MARKING DIAGRAMS NonRepetitive t 10 ms V 30 p GSM 4 4 Drain Continuous Steady State T = 25C I 15.5 A C D Drain Current 2 1 Power Dissipa- Steady State T = 25C P 65 W C D 3 tion DPAK Pulsed Drain t = 10 s I 50 A p DM CASE 369C Current 2 STYLE 2 1 3 Drain Operating Junction and Storage Temperature T , 55 to C J Gate Source T 175 STG 4 Single Pulse DraintoSource Avalanche E 304 mJ 4 AS Drain Energy (V = 25 V, V = 5 V, I = 15 A, DD GS PK L = 2.7 mH, R = 25 ) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 1 2 THERMAL RESISTANCE RATINGS 3 IPAK/DPAK Parameter Symbol Max Unit CASE 369D 1 2 3 C/W JunctiontoCase (Drain) R 2.3 JC STYLE 2 Gate Drain Source JunctiontoAmbient Steady State (Note 1) R 80 JA JunctiontoAmbient Steady State (Note 2) R 110 20P06L Device Code JA A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 in sq. pad size G = PbFree Package (Cu area = 1.127 in sq. 1 oz including traces) 2. Surfacemounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: May, 2019 Rev. 8 NTD20P06L/D AYWW AYWW T20 T20 P06LG P06LGNTD20P06L, NTDV20P06L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 74 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 64 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 150C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.5 2.0 V GS(TH) GS DS D Gate Threshold Temperature Coefficient V /T 3.1 mV/C GS(TH) J DraintoSource On Resistance R V = 5.0 V, I = 7.5 A 0.130 0.150 DS(on) GS D V = 5.0 V, I = 15 A 0.143 GS D Forward Transconductance g V = 10 V, I = 7.5 A 11 S FS DS D DraintoSource OnVoltage V T = 25C 1.2 V DS(on) J V = 5.0 V, GS I = 7.5 A D T = 150C 1.9 J CHARGES AND CAPACITANCES Input Capacitance C 740 1190 pF ISS Output Capacitance C 207 300 V = 0 V, f = 1 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 66 120 RSS Total Gate Charge Q 15 26 nC G(TOT) V = 5.0 V, V = 48 V, GS DS GatetoSource Charge Q 4.0 GS I = 18 A D GatetoDrain Charge Q 7.0 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11 20 ns d(ON) Rise Time t 90 180 r V = 5.0 V, V = 30 V, GS DD I = 15 A, R = 9.1 D G TurnOff Delay Time t 28 50 d(OFF) Fall Time t 70 135 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 1.5 2.5 V SD J V = 0 V, I = 15 A GS S T = 150C 1.3 J Reverse Recovery Time t 60 ns RR Charge Time t 39 a V = 0 V, d /d = 100 A/ s, GS IS t I = 12 A S Discharge Time t 21 b Reverse Recovery Charge Q 0.13 nC RR 3. Pulse Test: pulse width 300 s, duty cycle 2% 4. Switching characteristics are independent of operating junction temperatures Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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