NTD20P06L, NTDV20P06L MOSFET Power, Single, P-Channel, DPAK -60 V, -15.5 A Features www.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching I MAX D AEC Q101 Qualified NTDV20P06L V R TYP (Note 1) (BR)DSS DS(on) These Devices are PbFree and are RoHS Compliant 60 V 130 m 5.0 V 15.5 A Applications Bridge Circuits PChannel Power Supplies, Power Motor Controls D DCDC Conversion MAXIMUM RATINGS (T = 25C unless otherwise noted) J G Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS S GatetoSource Continuous V 20 V GS Voltage MARKING DIAGRAMS NonRepetitive t 10 ms V 30 p GSM 4 4 Drain Continuous Steady State T = 25C I 15.5 A C D Drain Current 2 1 Power Dissipa- Steady State T = 25C P 65 W C D 3 tion DPAK Pulsed Drain t = 10 s I 50 A p DM CASE 369C Current 2 STYLE 2 1 3 Drain Operating Junction and Storage Temperature T , 55 to C J Gate Source T 175 STG 4 Single Pulse DraintoSource Avalanche E 304 mJ 4 AS Drain Energy (V = 25 V, V = 5 V, I = 15 A, DD GS PK L = 2.7 mH, R = 25 ) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 1 2 THERMAL RESISTANCE RATINGS 3 IPAK/DPAK Parameter Symbol Max Unit CASE 369D 1 2 3 C/W JunctiontoCase (Drain) R 2.3 JC STYLE 2 Gate Drain Source JunctiontoAmbient Steady State (Note 1) R 80 JA JunctiontoAmbient Steady State (Note 2) R 110 20P06L Device Code JA A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 in sq. pad size G = PbFree Package (Cu area = 1.127 in sq. 1 oz including traces) 2. Surfacemounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: May, 2019 Rev. 8 NTD20P06L/D AYWW AYWW T20 T20 P06LG P06LGNTD20P06L, NTDV20P06L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 74 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 64 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 150C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.5 2.0 V GS(TH) GS DS D Gate Threshold Temperature Coefficient V /T 3.1 mV/C GS(TH) J DraintoSource On Resistance R V = 5.0 V, I = 7.5 A 0.130 0.150 DS(on) GS D V = 5.0 V, I = 15 A 0.143 GS D Forward Transconductance g V = 10 V, I = 7.5 A 11 S FS DS D DraintoSource OnVoltage V T = 25C 1.2 V DS(on) J V = 5.0 V, GS I = 7.5 A D T = 150C 1.9 J CHARGES AND CAPACITANCES Input Capacitance C 740 1190 pF ISS Output Capacitance C 207 300 V = 0 V, f = 1 MHz, V = 25 V OSS GS DS Reverse Transfer Capacitance C 66 120 RSS Total Gate Charge Q 15 26 nC G(TOT) V = 5.0 V, V = 48 V, GS DS GatetoSource Charge Q 4.0 GS I = 18 A D GatetoDrain Charge Q 7.0 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11 20 ns d(ON) Rise Time t 90 180 r V = 5.0 V, V = 30 V, GS DD I = 15 A, R = 9.1 D G TurnOff Delay Time t 28 50 d(OFF) Fall Time t 70 135 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 1.5 2.5 V SD J V = 0 V, I = 15 A GS S T = 150C 1.3 J Reverse Recovery Time t 60 ns RR Charge Time t 39 a V = 0 V, d /d = 100 A/ s, GS IS t I = 12 A S Discharge Time t 21 b Reverse Recovery Charge Q 0.13 nC RR 3. Pulse Test: pulse width 300 s, duty cycle 2% 4. Switching characteristics are independent of operating junction temperatures Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2