IAUT260N10S5N019 OptiMOS -5 Power-Transistor Product Summary V 100 V DS R 1.9 m W DS(on) I 260 A D Features N-channel - Enhancement mode P/G-HSOF-8-1 Tab AEC-Q101 qualified MSL1 up to 260C peak reflow 8 1 175C operating temperature Tab Green product (RoHS compliant) 1 Ultra low Rds(on) 8 Drain 100% Avalanche tested Tab Gate Type Package Marking pin 1 IAUT260N10S5N019 P/G-HSOF-8-1 5N10019 Source pin 2 - 8 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 260 A D C GS T =100C, C 197 1) V =10V GS 1) I T =25C 1040 Pulsed drain current D,pulse C 1) E I =130A 400 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 220 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 300 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 2.0 page 1 2019-03-14 IAUT260N10S5N019 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 0.5 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS V Drain-source breakdown voltage 100 - - V (BR)DSS I =1mA D V V =V , I =210A Gate threshold voltage 2.2 3.0 3.8 GS(th) DS GS D V =100V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =50V, V =0V, DS GS - 1 20 1) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =6V, I =65A Drain-source on-state resistance - 2.0 2.5 m DS(on) GS D V =10V, I =100A - 1.6 1.9 GS D Rev. 2.0 page 2 2019-03-14