NTE133 NChannel JFET Silicon Transistor General Purpose AF Amplifier TO106 Type Package Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DrainSource Voltage, V .......................................................... 25V DS DrainGate Voltage, V ............................................................ 25V DG GateSource Voltage, V ......................................................... 25V GS Gate Current, I .................................................................. 10mA G Total Device Dissipation (T = +25 C), P ......................................... 300mW A D Derate Above 25 C ....................................................... 2mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1/16 from case for 10sec), T ................... +260 C L Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit GateSource Breakdown Voltage V I = 1 A, V = 0 25 V (BR)GSS G DS Gate Reverse Current I V = 20V, V = 0 1 nA GSS GS DS V = 20V, V = 0, T = +150 C 1 A GS DS A GateSource Cutoff Voltage V I = 1 A, V = 15V 6.5 V GS(off) D DS GateSource Voltage V I = 50 A, V = 15V 0.4 6.0 V GS D DS ZeroGateVoltage Drain Current I V = 15V, V = 0 0.5 15 mA DSS DS GS Forward Transfer Admittance y V = 15V, V = 0, f = 1kHz 1000 7500 mho fs DS GS Rev. 1013D G S .207 (5.28) Dia .060 (1.52) .180 Min (4.57) .500 Seating (12.7) Plane Min .018 (0.45) .100 (2.54) Dia Drain Source Gate