X-On Electronics has gained recognition as a prominent supplier of NTD5865N-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD5865N-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD5865N-1G ON Semiconductor

NTD5865N-1G electronic component of ON Semiconductor
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Part No.NTD5865N-1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Single N-CH 60V 38A
Datasheet: NTD5865N-1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
225: USD 0.2808 ea
Line Total: USD 63.18 
Availability - 0
MOQ: 225  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 225
Multiples : 1
225 : USD 0.2808
1050 : USD 0.275
2175 : USD 0.2691
4575 : USD 0.2574
11400 : USD 0.2574
22725 : USD 0.2574

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 916
Multiples : 916
916 : USD 0.3932

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD5865N-1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD5865N-1G and other electronic components in the MOSFETs category and beyond.

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NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 m Features Low Gate Charge Fast Switching NTD5865N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 59.2 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 150C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 8.6 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 20 A 14 18 m DS(on) GS D Forward Transconductance gFS V = 15 V, I = 20 A 6.9 S DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 1261 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 136 oss V = 25 V DS Reverse Transfer Capacitance C 85 rss Total Gate Charge Q 23 nC G(TOT) Threshold Gate Charge Q 1.5 G(TH) V = 10 V, V = 48 V, GS DS I = 38 A D GatetoSource Charge Q 6.7 GS GatetoDrain Charge Q 7.7 GD Gate Resistance R 1.5 G SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 10 ns d(on) Rise Time t 17 r V = 10 V, V = 48 V, GS DD I = 38 A, R = 2.5 D G Turn Off Delay Time t 20 d(off) Fall Time t 3.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.94 1.2 V SD J V = 0 V, GS I = 38 A S T = 125C 0.85 J Reverse Recovery Time t 23 ns RR Charge Time ta 17 V = 0 V, dIs/dt = 100 A/ s, GS I = 38 A Discharge Time tb S 6 Reverse Recovery Charge Q 20 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number Package Shipping NTD5865N 1G DPAK (Straight Lead) 75 Units / Rail (Pb Free) NTD5865NT4G DPAK 2500 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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