CDM22012-800LRFP www.centralsemi.com N-CHANNEL LR POWER MOSFET DESCRIPTION: 12 AMP, 800 VOLT The CENTRAL SEMICONDUCTOR CDM22012-800LRFP is an 800 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with ultra low r , low threshold voltage, and low gate DS(ON) charge for optimal efficiency. MARKING CODE: CDM12-800LR TO-220FP CASE APPLICATIONS: FEATURES: Power Factor Correction High voltage capability (V =800V) DS Alternative energy inverters Low gate charge (Q =7.6nC TYP) gs Solid State Lighting (SSL) Ultra low r (0.37 TYP) DS(ON) MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL UNITS Drain-Source Voltage V 800 V DS Gate-Source Voltage V 30 V GS Continuous Drain Current (Steady State) I 12 A D Continuous Drain Current (T =100C Steady State) I 7.7 A C D Maximum Pulsed Drain Current, tp=10s I 48 A DM Continuous Source Current (Body Diode) I 12 A S Maximum Pulsed Source Current (Body Diode) I 48 A SM Single Pulse Avalanche Energy (Note 1) E 702 mJ AS Power Dissipation P 40 W D Operating and Storage Junction Temperature T , T -55 to +150 C J stg Thermal Resistance 3.13 C/W JC Thermal Resistance 62.5 C/W JA Note 1: L=79mH, I =4.0A, V =100V, R =25, Initial T =25C AS DD G J ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =30V, V=0 100 nA GSSF GSSR GS DS I V =800V, V=0 1.0 A DSS DS GS BV V =0, I=250A 800 V DSS GS D V V =V , I=250A 2.0 4.0 V GS(th) GS DS D V V =0, I=12A 1.4 V SD GS S r V =10V, I=6.0A 0.37 0.45 DS(ON) GS D C V =100V, V =0, f=1.0MHz 9.5 pF rss DS GS C V =100V, V =0, f=1.0MHz 1,090 pF iss DS GS C V =100V, V =0, f=1.0MHz 55.2 pF oss DS GS R1 (7-March 2016)CDM22012-800LRFP N-CHANNEL LR POWER MOSFET 12 AMP, 800 VOLT ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS TYP UNITS Q V =640V, V =10V, I =12A (Note 2) 52.4 nC g(tot) DD GS D Q V =640V, V =10V, I =12A (Note 2) 7.6 nC gs DD GS D Q V =640V, V =10V, I =12A (Note 2) 31.4 nC gd DD GS D t V =400V, V =10V, I =12A, R =24 (Note 2) 21.1 ns d(on) DD GS D G t V =400V, V =10V, I =12A, R =24 (Note 2) 44.8 ns r DD GS D G t V =400V, V =10V, I =12A, R =24 (Note 2) 171.2 ns d(off) DD GS D G t V =400V, V =10V, I =12A, R =24 (Note 2) 42.5 ns f DD GS D G t V =0, I =12A, di/dt=100A/s (Note 2) 430 ns rr GS S Q V =0, I =12A, di/dt=100A/s (Note 2) 6.5 C rr GS S Note 2: Pulse Width < 300s, Duty Cycle < 2% TO-220FP CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING CODE: CDM12-800LR R1 (7-March 2016) www.centralsemi.com