Si1011X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g Typical ESD protection: 700 V (HBM) 0.640 at V = - 4.5 V - 0.48 GS Fast Switching Speed 0.880 at V = - 2.5 V Material categorization: - 0.41 GS For definitions of compliance please see 1.200 at V = - 1.8 V - 12 - 0.35 1.15 nC GS www.vishay.com/doc 99912 1.443 at V = - 1.5 V - 0.10 GS 2.475 at V = - 1.2 V APPLICATIONS - 0.05 GS Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Load Switch for Low Voltage Gate Drive - Load Switch for 1.2 V Power Line SC-89 (3-LEADS) S Marking Code G 1 K XX Lot Traceability D 3 and Date Code G Part Code S 2 Top View D Ordering Information: Si1011X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 12 DS V V Gate-Source Voltage 5 GS b, c T = 25 C A - 0.48 Continuous Drain Current (T = 150 C) I J D b, c T = 70 C A - 0.38 A I - 1.5 Pulsed Drain Current (t = 300 s) DM b, c T = 25 C I Continuous Source-Drain Diode Current A S - 0.16 b, c T = 25 C A 0.19 P Maximum Power Dissipation W D b, c T = 70 C A 0.12 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 440 530 a, b R C/W Maximum Junction-to-Ambient thJA Steady State 540 650 Notes: a. Maximum under steady state conditions is 650 C/W. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. Document Number: 62660 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-2732-Rev. B, 12-Nov-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Y Y Si1011X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test ConditionsMin.Typ.Max.Unit Static V V = 0, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 7 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 1.7 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.35 - 0.8 V GS(th) DS GS D V = 0 V, V = 5 V 10 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V 1 DS GS A V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I DSS V = - 12 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 1.5 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 0.4 A 0.530 0.640 GS D V = - 2.5 V, I = - 0.2 A 0.730 0.880 GS D a R V = - 1.8 V, I = - 0.1 A 0.920 1.200 Drain-Source On-State Resistance DS(on) GS D V = - 1.5 V, I = - 0.05 A 1.100 1.443 GS D V = - 1.2 V, I = - 0.05 A 1.650 2.475 GS D g V = - 6 V, I = - 0.4 A Forward Transconductance 1S fs DS D b Dynamic Input Capacitance C 62 iss Output Capacitance C V = - 6 V, V = 0 V, f = 1 MHz 26 pF oss DS GS Reverse Transfer Capacitance C 20 rss V = - 6 V, V = - 4.5 V, I = - 0.4 A 24 DS GS D Q Total Gate Charge g 1.15 2 nC Q Gate-Source Charge V = - 6 V, V = - 2.5 V, I = - 0.4 A 0.37 gs DS GS D Q Gate-Drain Charge 0.43 gd R Gate Resistance f = 1 MHz 12 g t Turn-On Delay Time 48 d(on) t Rise Time V = - 6 V, R = 20 11 20 r DD L ns I - 0.3 A, V = - 5 V, R = 1 t Turn-Off DelayTime D GEN g 918 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics a I - 1.5 A Pulse Diode Forward Current SM V I = - 0.3 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 12 20 ns rr Q Body Diode Reverse Recovery Charge 510 nC rr I = - 0.3 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 7 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62660 2 S12-2732-Rev. B, 12-Nov-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
