Si1013CX www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES TrenchFET power MOSFET PRODUCT SUMMARY 100 % R tested g V (V) R ()I (A) Q (TYP.) (nC) DS DS(on) D g Typical ESD protection: 1000 V (HBM) 0.760 at V = -4.5 V -0.45 GS Fast switching speed -20 1.040 at V = -2.5 V -0.40 1 GS Material categorization: 1.500 at V = -1.8 V -0.32 GS for definitions of compliance please see www.vishay.com/doc 99912 SC-89 (3 leads) APPLICATIONS D S 3 Load / power switch for portable devices Drivers: relays, solenoids, displays Battery operated systems 22 G SS 11 G Top View D P-Channel MOSFET Marking Code: 6 Ordering Information: Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -20 DS V Gate-Source Voltage V 8 GS b, c T = 25 C -0.45 A Continuous Drain Current (T = 150 C) I J D b, c T = 70 C -0.36 A A Pulsed Drain Current (t = 300 s) I -1.5 DM b, c Continuous Source-Drain Diode Current T = 25 C I -0.16 A S b, c T = 25 C 0.19 A Maximum Power Dissipation P W D b, c T = 70 C 0.12 A Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 5 s 440 530 a, b Maximum Junction-to-Ambient R C/W thJA Steady State 540 650 Notes a. Maximum under steady state conditions is 650 C/W. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. S14-1601-Rev. B, 11-Aug-14 Document Number: 67995 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1013CX www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -20 - - V DS GS D V Temperature Coefficient V /T --12 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -1.8 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.4 - -1 V GS(th) DS GS D V = 0 V, V = 8 V - - 30 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V - - 1 DS GS A V = -20 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I DSS V = -20 V, V = 0 V, T = 85 C - - -10 DS GS J a On-State Drain Current I V = 5 V, V = -4.5 V -1.5 - - A D(on) DS GS V = -4.5 V, I = -0.4 A - 0.630 0.760 GS D a Drain-Source On-State Resistance R V = -2.5 V, I = -0.2 A - 0.865 1.040 DS(on) GS D V = -1.8 V, I = -0.1 A - 1.200 1.500 GS D Forward Transconductance g V = -10 V, I = 0.4 A - 1 - S fs DS D b Dynamic Input Capacitance C -45 - iss Output Capacitance C -1V = -10 V, V = 0 V, f = 1 MHz5- pF oss DS GS Reverse Transfer Capacitance C -10- rss V = -10 V, V = -4.5 V, I = -0.4 A - 1.65 2.50 DS GS D Total Gate Charge Q g -1 2 nC Gate-Source Charge Q V = -0 V, V = -2.5 V, I = -0.4 -0.2 - gs DS GS D Gate-Drain Charge Q -0.26- gd Gate Resistance R f = 1 MHz 2.4 12 24 g Turn-On Delay Time t -9 18 d(on) Rise Time t -10 20 r V = -10 V, R = 33.3 DD L I -0.3 A, V = -4.5 V, R = 1 Turn-Off DelayTime t -1D GEN g020 d(off) Fall Time t -8 16 f ns Turn-On Delay Time t -1 2 d(on) Rise Time t -8 16 r V = -10 V, R = 33.3 DD L I -0.3 A, V = -8 V, R = 1 Turn-Off DelayTime t -9D GEN g 18 d(off) Fall Time t -5 10 f Drain-Source Body Diode Characteristics a Pulse Diode Forward Current I -- -1.5 A SM Body Diode Voltage V I = -0.3 A - -0.8 -1.2 V SD S Body Diode Reverse Recovery Time t -16 24 ns rr Body Diode Reverse Recovery Charge Q - 8 16 nC rr I = -0.3 A, dI/dt = 100 A/s F Reverse Recovery Fall Time t -11 - a ns Reverse Recovery Rise Time t -5 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1601-Rev. B, 11-Aug-14 Document Number: 67995 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000