X-On Electronics has gained recognition as a prominent supplier of SI1032R-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1032R-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1032R-T1-GE3 Vishay

SI1032R-T1-GE3 electronic component of Vishay
SI1032R-T1-GE3 Vishay
SI1032R-T1-GE3 MOSFETs
SI1032R-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI1032R-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 20 V 140mA (Ta) 250mW (Ta) Surface Mount SC-75A
Datasheet: SI1032R-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1509 ea
Line Total: USD 452.7 
Availability - 11640
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
914
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 110
Multiples : 1
110 : USD 0.5912
164 : USD 0.3967
166 : USD 0.3927
206 : USD 0.3163
250 : USD 0.3119
500 : USD 0.2818

2910
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.2463

26190
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1586
6000 : USD 0.15
9000 : USD 0.1487
15000 : USD 0.1475
30000 : USD 0.145

124472
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 0.5288
10 : USD 0.3787
100 : USD 0.2634
500 : USD 0.2046
1000 : USD 0.1639
3000 : USD 0.1485
6000 : USD 0.1408
9000 : USD 0.1364

2772
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 0.616
10 : USD 0.4228
50 : USD 0.3304
73 : USD 0.2492
200 : USD 0.2366

914
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 166
Multiples : 1
166 : USD 0.3798

2910
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.2382

17460
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.2398
12000 : USD 0.2191
18000 : USD 0.2038

11640
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1509
6000 : USD 0.1461
9000 : USD 0.1313
15000 : USD 0.1301

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI1032R-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1032R-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1032R/X Vishay Siliconix N-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (mA) DS DS(on) D Definition 5 at V = 4.5 V 200 GS Low-Side Switching Low On-Resistance: 5 7 at V = 2.5 V 175 GS 20 Low Threshold: 0.9 V (typ.) 9 at V = 1.8 V 150 GS Fast Switching Speed: 35 ns 10 at V = 1.5 V 50 GS TrenchFET Power MOSFETs: 1.5 V Rated 2000 V ESD Protection Compliant to RoHS Directive 2002/95/EC BENEFITS Ease in Driving Switches SC-75A or SC-89 Low Offset (Error) Voltage Low-Voltage Operation G 1 High-Speed Circuits Low Battery Voltage Operation 3 D APPLICATIONS S 2 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Marking Code: G Memories Top View Battery Operated Systems Ordering Information: Power Supply Converter Circuits Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Load/Power Switching Cell Phones, Pagers Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Si1032R Si1032X Parameter Symbol Unit 5 s Steady State 5 s Steady State V Drain-Source Voltage 20 DS V V Gate-Source Voltage 6 GS T = 25 C 200 140 210 200 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 110 100 150 140 A mA a Pulsed Drain Current I 500 600 DM a I 250 200 300 240 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 340 300 A a P mW Maximum Power Dissipation for SC-75 D T = 85 C 145 130 170 150 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. Document Number: 71172 www.vishay.com S10-2544-Rev. F, 08-Nov-10 1Si1032R/X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.40 0.7 1.2 V GS(th) DS GS D V = 0 V, V = 2.8 V 0.5 1.0 DS GS I Gate-Body Leakage GSS V = 0 V, V = 4.5 V 1.0 3.0 DS GS A V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V = 5 V, V = 4.5 V 250 mA On-State Drain Current D(on) DS GS V = 4.5 V, I = 200 mA 5 GS D V = 2.5 V, I = 175 mA 7 GS D a R Drain-Source On-State Resistance DS(on) V = 1.8 V, I = 150 mA 9 GS D V = 1.5 V, I = 40 mA 10 GS D a Forward Transconductance g V = 10 V, I = 200 mA 0.5 S fs DS D a V I = 150 mA, V = 0 V Diode Forward Voltage 1.2 V SD S GS b Dynamic Q Total Gate Charge 750 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 250 mA 75 pC gs DS GS D Q Gate-Drain Charge 225 gd t Turn-On Delay Time 50 d(on) t Rise Time V = 10 V, R = 47 25 r DD L ns I 200 mA, V = 4.5 V, R = 10 t Turn-Off Delay Time D GEN g 50 d(off) t Fall Time 25 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A 0.5 600 T = - 55 C J V = 5 V thru 1.8 V GS 500 0.4 25 C 400 0.3 125 C 300 0.2 200 0.1 100 1 V 0.0 0 0123456 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71172 2 S10-2544-Rev. F, 08-Nov-10 I - Drain Current (A) D I - Drain Current (mA) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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