X-On Electronics has gained recognition as a prominent supplier of BUK7Y2R0-40HX MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7Y2R0-40HX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7Y2R0-40HX Nexperia

BUK7Y2R0-40HX electronic component of Nexperia
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Part No.BUK7Y2R0-40HX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Mosfet2.0ohmsTrench9 AEC-Q101 qualified
Datasheet: BUK7Y2R0-40HX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.584 ea
Line Total: USD 1.58 
Availability - 4181
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1451
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1875
10 : USD 1.1244
25 : USD 1.1218
100 : USD 1.1191
250 : USD 1.1164
500 : USD 1.1138
1000 : USD 1.1111

4181
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.584
10 : USD 1.254
100 : USD 1.0549
500 : USD 0.9658
1000 : USD 0.9559
1500 : USD 0.9284
9000 : USD 0.8701

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the BUK7Y2R0-40HX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7Y2R0-40HX and other electronic components in the MOSFETs category and beyond.

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BUK7Y2R0-40H N-channel 40 V, 2.0 m standard level MOSFET in LFPAK56 9 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits Fully automotive qualified to AEC-Q101: 175 C rating suitable for thermally demanding environments Trench 9 Superjunction technology: Reduced cell pitch enables enhanced power density and efficiency with lower R in DSon same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight V limits enable easy paralleling of MOSFETs GS(th) LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: Improved reliability, with reduced R and R th DSon Increases maximum current capability and improved current spreading 3. Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 217 W tot mbNexperia BUK7Y2R0-40H N-channel 40 V, 2.0 m standard level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 1.07 1.53 2 m DSon GS D j resistance Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 10.8 27.3 nC GD D DS GS Fig. 12 Fig. 13 Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V - 21 - nC r S S GS V = 20 V Fig. 16 DS S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.8 - S S GS V = 20 V T = 25 C Fig. 16 DS j BUK7Y2R0-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 9 May 2018 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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