Preliminary Technical Information X2-Class V = 700V IXTU8N70X2 DSS Power MOSFET I = 8A IXTY8N70X2 D25 R 500m DS(on) IXTA8N70X2 TO-251 (IXTU) N-Channel Enhancement Mode IXTP8N70X2 G D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 700 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 700 V TO-263 (IXTA) DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM S I T = 25 C8A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 16 A TO-220 (IXTP) DM C JM I T = 25 C4A A C E T = 25 C 250 mJ AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G D P T = 25 C 150 W D C S D (Tab) T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages F Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 N/lb C Low R and Q M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in DS(ON) G d Avalanche Rated Weight TO-251 0.40 g Low Package Inductance TO-252 0.35 g TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 700 V DSS GS D V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 10 A Power Supplies DSS DS DSS GS DC-DC Converters T = 125C 250 A J PFC Circuits R V = 10V, I = 0.5 I , Note 1 500 m AC and DC Motor Drives DS(on) GS D D25 Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100757B(6/18)IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 4.8 8.0 S fs DS D D25 R Gate Input Resistance 6 Gi C 800 pF iss C V = 0V, V = 25V, f = 1MHz 495 pF oss GS DS C 2.2 pF rss Effective Output Capacitance C 43 pF o(er) Energy related V = 0V GS C 129 pF V = 0.8 V o(tr) Time related DS DSS t 24 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 53 ns d(off) R = 30 (External) G t 24 ns f Q 12.0 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 3.1 nC gs GS DS DSS D D25 Q 4.4 nC gd R 0.83 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 8 A S GS I Repetitive, pulse Width Limited by T 32 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 200 ns rr I = 4A, -di/dt = 100A/ s F Q 1.65 C RM V = 100V R I 16.3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537