X-On Electronics has gained recognition as a prominent supplier of IXTA8N70X2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTA8N70X2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTA8N70X2 IXYS

IXTA8N70X2 electronic component of IXYS
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See Product Specifications
Part No.IXTA8N70X2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 700V/8A Ultra Junct X2-Class MOSFET
Datasheet: IXTA8N70X2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.2525 ea
Line Total: USD 4.25 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 4.2525
10 : USD 3.5375
50 : USD 2.6

0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 4.046
3 : USD 3.64
6 : USD 2.758
17 : USD 2.604

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTA8N70X2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTA8N70X2 and other electronic components in the MOSFETs category and beyond.

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Preliminary Technical Information X2-Class V = 700V IXTU8N70X2 DSS Power MOSFET I = 8A IXTY8N70X2 D25 R 500m DS(on) IXTA8N70X2 TO-251 (IXTU) N-Channel Enhancement Mode IXTP8N70X2 G D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 700 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 700 V TO-263 (IXTA) DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM S I T = 25 C8A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 16 A TO-220 (IXTP) DM C JM I T = 25 C4A A C E T = 25 C 250 mJ AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G D P T = 25 C 150 W D C S D (Tab) T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages F Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 N/lb C Low R and Q M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in DS(ON) G d Avalanche Rated Weight TO-251 0.40 g Low Package Inductance TO-252 0.35 g TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 700 V DSS GS D V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 10 A Power Supplies DSS DS DSS GS DC-DC Converters T = 125C 250 A J PFC Circuits R V = 10V, I = 0.5 I , Note 1 500 m AC and DC Motor Drives DS(on) GS D D25 Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100757B(6/18)IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 4.8 8.0 S fs DS D D25 R Gate Input Resistance 6 Gi C 800 pF iss C V = 0V, V = 25V, f = 1MHz 495 pF oss GS DS C 2.2 pF rss Effective Output Capacitance C 43 pF o(er) Energy related V = 0V GS C 129 pF V = 0.8 V o(tr) Time related DS DSS t 24 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 53 ns d(off) R = 30 (External) G t 24 ns f Q 12.0 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 3.1 nC gs GS DS DSS D D25 Q 4.4 nC gd R 0.83 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 8 A S GS I Repetitive, pulse Width Limited by T 32 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 200 ns rr I = 4A, -di/dt = 100A/ s F Q 1.65 C RM V = 100V R I 16.3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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