IPD80R600P7 MOSFET DPAK 800V CoolMOS P7 Power Device The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineons over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E reduced Q , C , and C DS(on) oss g iss oss Best-in-class DPAK R DS(on) 3 Best-in-class V(GS)th of 3V and smallest V (GS)th variation of 0.5V Integrated Zener Diode ESD protection Fully optimized portfolio Drain Pin 2, Tab Benefits Best-in-class performance *1 Gate Pin 1 Enabling higher power density designs, BOM savings and lower *2 assembly costs Easy to drive and to parallel Source *1: Internal body diode *2: Integrated ESD diode Pin 3 Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential applications Recommended for hard and soft switching flyback topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power. Also suitable for PFC stage in Consumer applications and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 800 V DS j=25C R 0.60 DS(on),max Qg,typ 20 nC I 8 A D E 500V 2.0 J oss V 3 V GS(th),typ ESD class (HBM) 2 - Type / Ordering Code Package Marking Related Links IPD80R600P7 PG-TO252-3 80R600P7 see Appendix A Final Data Sheet 1 Rev. 2.2, 2020-05-26800V CoolMOS P7 Power Device IPD80R600P7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 12 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.2, 2020-05-26