X-On Electronics has gained recognition as a prominent supplier of SSM3J35AFS,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J35AFS,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J35AFS,LF Toshiba

SSM3J35AFS,LF electronic component of Toshiba
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Part No.SSM3J35AFS,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Datasheet: SSM3J35AFS,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.729 ea
Line Total: USD 0.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0412
6000 : USD 0.0406
9000 : USD 0.0402
12000 : USD 0.0397
15000 : USD 0.0393
24000 : USD 0.0389
30000 : USD 0.0386
45000 : USD 0.0382
75000 : USD 0.0378

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.729
10 : USD 0.6075
100 : USD 0.135
500 : USD 0.0853
1000 : USD 0.0583
3000 : USD 0.0443

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3J35AFS,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J35AFS,LF and other electronic components in the MOSFETs category and beyond.

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SSM3J35AFS MOSFETs Silicon P-Channel MOS SSM3J35AFS 1. Applications Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : R = 3.2 (typ.) ( V = -1.2 V) DS(ON) GS R = 2.3 (typ.) ( V = -1.5 V) DS(ON) GS R = 2.0 (typ.) ( V = -1.8 V) DS(ON) GS R = 1.5 (typ.) ( V = -2.5 V) DS(ON) GS R = 1.1 (typ.) ( V = -4.5 V) DS(ON) GS 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Drain SSM Start of commercial production 2017-03 2017-2021 2021-02-01 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0SSM3J35AFS 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 10 GSS Drain current (DC) (Note 1) I -250 mA D Drain current (pulsed) (Note 1) I -600 DP Power dissipation (Note 2) P 150 mW D Power dissipation (Note 3) 500 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.36 mm2 3) Note 3: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 5. Electrostatic Discharge Test (T =25 ) a Apply voltage Failure Test conditions 2000 V 0/10 pcs C = 100 pF, R = 1.5 k (JEITA ED-4701) Note: Conducted Electrostatic Discharge Test based on JEITA ED-4701 standard, and confirmed above result. 2017-2021 2021-02-01 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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