X-On Electronics has gained recognition as a prominent supplier of SSM3J35CT,L3F(T MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J35CT,L3F(T MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J35CT,L3F(T Toshiba

Name: SSM3J35CT,L3F(T
Brand: Toshiba
SKU: SSM3J35CTL3FT_Toshiba
Availability: InStock
Rating: 5 (11 reviews)

SSM3J35CT,L3F(T electronic component of Toshiba

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See Product Specifications

Part No.	SSM3J35CT,L3F(T
Manufacturer:	Toshiba
Category:	MOSFETs
Description:	MOSFET P Trench 20V 100mA 1V @ 1mA 8 Î© @ 50mA,4V CST3 RoHS
Datasheet:	SSM3J35CT,L3F(T Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1941 ea
Line Total: USD 0.97

Availability - 19012
Ship by Thu. 13 Feb to Tue. 18 Feb

MOQ: 5 Multiples: 5
Pack Size: 5

SSM3J35CT,L3F(T More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

19012

Ship by Thu. 13 Feb to Tue. 18 Feb

MOQ : 5
Multiples : 5

5 : USD 0.1941
50 : USD 0.1396
150 : USD 0.1164
500 : USD 0.0672
2500 : USD 0.0571
5000 : USD 0.0512

Specifications

Manufacturer

Toshiba Toshiba

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

CST3 CST3

Brand Category

Toshiba Toshiba

Fet Type

p trench p trench

Drain To Source Voltagevdss

20 V 20 V

Continuous Drain Current Id @ 25°C

100 mA 100 mA

Vgsth Max @ Id

1v @ 1m A 1v @ 1m A

Rds On Max @ Id Vgs

8 @ 50ma,4v 8 @ 50ma,4v

Power Dissipation Max

100 mW 100 mW

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

100 mA 100 mA

Power Dissipation Pd

100 mW 100 mW

Drain Source On Resistance Rdson@Vgs Id

8 Ohms @4V , 50mA 8 Ohms @4V , 50mA

Gate Threshold Voltage Vgsth@Id

1 V @1 mA 1 V @1 mA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

SSM3J35CT,L3F(T Alternative Parts

We are delighted to provide the SSM3J35CT,L3F(T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J35CT,L3F(T and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SSM3J35CT,L3F(T is a surface mount MOSFET P Trench with a 20V max drain-source voltage and a max drain current of 100mA. It has a threshold voltage of 1V and a gate-source leakage current of 1mA. The drain-source on-resistance at 50mA is 8O and the reverse transfer capacitance is 4V. The device is manufactured by Toshiba and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
19012 Ship by Thu. 13 Feb to Tue. 18 Feb MOQ : 5 Multiples : 5	5 : USD 0.1941 50 : USD 0.1396 150 : USD 0.1164 500 : USD 0.0672 2500 : USD 0.0571 5000 : USD 0.0512

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