SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J56MFV Load Switching Applications 1.2 V drive Unit: mm Low ON-resistance: R = 390 m (max) ( V = -4.5 V) DS(ON) GS R = 480 m (max) ( V = -2.5 V) DS(ON) GS R = 660 m (max) ( V = -1.8 V) DS(ON) GS R = 900 m (max) ( V = -1.5 V) DS(ON) GS R = 4000 m (max) ( V = -1.2 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V DSS Gate-Source voltage V 8 V GSS DC I (Note 1) -800 D Drain current mA Pulse I (Note 1) -1600 DP P (Note 2) 150 D 1.Gate Power dissipation P (Note 3) 500 mW D 2.Source t < 5s 800 3.Drain Channel temperature T 150 C ch Storage temperature range T 55 to 150 C VESM stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, JEITA etc.) may cause this product to decrease in the reliability significantly even TOSHIBA 2-1L1B if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 1.5mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.585 mm ) Note 3: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 PW 1 2 1 2 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and Power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration. Start of commercial production 2011-05 1 2014-03-01 SSM3J56MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V .(Note 5) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -100 mA (Note 4) 0.5 1.0 S fs DS D I = -800 mA, V = -4.5 V (Note 4) 310 390 D GS I = -500 mA, V = -2.5 V (Note 4) 380 480 D GS Drainsource ON-resistance R I = -200 mA, V = -1.8 V (Note 4) 470 660 m DS (ON) D GS I = -100 mA, V = -1.5 V (Note 4) 560 900 D GS I = -10 mA, V = -1.2 V (Note 4) 770 4000 D GS Input capacitance C 100 iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 16 pF DS GS oss Reverse transfer capacitance C 10 rss Turn-on time t V = -10 V, I = -200 mA 8 on DD D Switching time ns Turn-off time t V = 0 to -2.5 V, R = 50 26 GS G off Total gate charge Q 1.6 g V = -10 V, I = -800 mA, DD D nC Gate-source charge Q 0.2 gs1 V = -4.5 V GS Gate-drain charge Q 0.4 gd Drain-source forward voltage V I = 800 mA, V = 0 V (Note 4) 0.9 1.2 V DSF D GS Note 4: Pulse test Note 5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit 0 V (a) Test Circuit (b) V 90% IN OUT 0 IN 10% 2.5 V 2.5V R L V DS (ON) 90% (c) V 10 s OUT V DD V = -10 V 10% DD V DD R = 50 G t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = -1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. 2 2014-03-01 R G