SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 4 V drive 2.10.1 Low ON-resistance: R = 530 m (max) ( V = 4 V) on GS 1.70.1 R = 310 m (max) ( V = 10 V) on GS Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drain-source voltage V 20 V DS Gate-source voltage V 20 V GSS DC I 1.2 D Drain current A Pulse I 2.4 DP P 800 D (Note 1) Drain power dissipation mW P 500 D (Note 2) 1: Gate Channel temperature T 150 C ch 2: Source Storage temperature range T 55 to 150 C stg 3: Drain Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. TOSHIBA 2-2U1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 6.6 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm 25.4 mm 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit Drain-source breakdown voltage V I = 1 mA, V = 0 20 V (BR) DSS D GS Drain cutoff current I V = 20 V, V = 0 1 A DSS DS GS Gate leakage current I V = 20 V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 0.1 mA 1.1 2.3 V th DS D Forward transfer admittance Y V = 5 V, I = 0.6 A (Note 3) 0.58 1.16 S fs DS D I = 0.6 A, V = 10 V (Note 3) 230 310 D GS Drain-source ON-resistance R m DS (ON) I = 0.6 A, V = 4 V (Note 3) 390 530 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 36 pF iss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 30 pF oss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 10 pF rss DS GS Turn-on time t 21 V = 10 V, I = 0.6 A, on DD D Switching time ns V = 0 to 4 V, R = 10 Turn-off time t GS G 8 off Drain-source forward voltage V I = 1.2 A, V = 0 V (Note 3) 1.0 1.4 V DSF D GS Note 3: Pulse test Start of commercial production 2005-02 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3K106TU Switching Time Test Circuit (a) Test Circuit (b) V IN 4 V 90% OUT 4 V IN 10% 0 V 0 V DD (c) V 10 s OUT 10% V DD 90% V = 10 V DD V DS (ON) R = 10 t t G r f Duty % t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Marking Equivalent Circuit (top view) 3 3 KK6 1 2 1 2 Note V can be expressed as the voltage between gate and source when the low operating current value is I = 0.1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th, GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 R G