X-On Electronics has gained recognition as a prominent supplier of SSM3K106TU(TE85L) MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K106TU(TE85L) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K106TU(TE85L) Toshiba

SSM3K106TU(TE85L) electronic component of Toshiba
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Part No.SSM3K106TU(TE85L)
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET Vds=20V Id=1.2A 3Pin
Datasheet: SSM3K106TU(TE85L) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1657 ea
Line Total: USD 497.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1657
6000 : USD 0.1564
9000 : USD 0.145
24000 : USD 0.1409

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the SSM3K106TU(TE85L) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K106TU(TE85L) and other electronic components in the MOSFETs category and beyond.

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SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 4 V drive 2.10.1 Low ON-resistance: R = 530 m (max) ( V = 4 V) on GS 1.70.1 R = 310 m (max) ( V = 10 V) on GS Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drain-source voltage V 20 V DS Gate-source voltage V 20 V GSS DC I 1.2 D Drain current A Pulse I 2.4 DP P 800 D (Note 1) Drain power dissipation mW P 500 D (Note 2) 1: Gate Channel temperature T 150 C ch 2: Source Storage temperature range T 55 to 150 C stg 3: Drain Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. TOSHIBA 2-2U1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 6.6 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm 25.4 mm 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit Drain-source breakdown voltage V I = 1 mA, V = 0 20 V (BR) DSS D GS Drain cutoff current I V = 20 V, V = 0 1 A DSS DS GS Gate leakage current I V = 20 V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 5 V, I = 0.1 mA 1.1 2.3 V th DS D Forward transfer admittance Y V = 5 V, I = 0.6 A (Note 3) 0.58 1.16 S fs DS D I = 0.6 A, V = 10 V (Note 3) 230 310 D GS Drain-source ON-resistance R m DS (ON) I = 0.6 A, V = 4 V (Note 3) 390 530 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 36 pF iss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 30 pF oss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 10 pF rss DS GS Turn-on time t 21 V = 10 V, I = 0.6 A, on DD D Switching time ns V = 0 to 4 V, R = 10 Turn-off time t GS G 8 off Drain-source forward voltage V I = 1.2 A, V = 0 V (Note 3) 1.0 1.4 V DSF D GS Note 3: Pulse test Start of commercial production 2005-02 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3K106TU Switching Time Test Circuit (a) Test Circuit (b) V IN 4 V 90% OUT 4 V IN 10% 0 V 0 V DD (c) V 10 s OUT 10% V DD 90% V = 10 V DD V DS (ON) R = 10 t t G r f Duty % t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Marking Equivalent Circuit (top view) 3 3 KK6 1 2 1 2 Note V can be expressed as the voltage between gate and source when the low operating current value is I = 0.1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th, GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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