SSM3K116TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K116TU High Speed Switching Applications 2.5V drive Unit: mm Low on-resistance: R = 135m (max) ( V = 2.5 V) on GS 2.10.1 R = 100m (max) ( V = 4.5 V) on GS 1.70.1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1 Drain-Source voltage V 30 V DS 3 2 Gate-Source voltage V 12 V GSS DC I 2.2 D Drain current A Pulse I 4.4 DP P 800 D (Note 1) Drain power dissipation mW P 500 D (Note 2) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg 1: Gate Note: Using continuously under heavy loads (e.g. the application of 2: Source high temperature/current/voltage and the significant change in 3: Drain temperature, etc.) may cause this product to decrease in the UFM reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 2-2U1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure Weight: 6.6 mg (typ.) rate, etc). Note 1: Mounted on ceramic board. 2 (25.4 mm 25.4 mm 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = 1 mA, V = 0 30 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = 12 V 18 (BR) DSX D GS Drain cut-off current I V = 30 V, V = 0 1 A DSS DS GS Gate leakage current I V = 12V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.5 1.1 V th DS D Forward transfer admittance Y V = 3 V, I = 0.25 A (Note3) 1 2 S fs DS D I = 0.5 A, V = 4.5 V (Note3) 75 100 D GS Drain-Source on-resistance R m DS (ON) I = 0.25 A, V = 2.5 V (Note3) 95 135 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 245 pF iss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 41 pF oss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 33 pF rss DS GS Turn-on time t 9 V = 10 V, I = 0.25 A, on DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 15 off Drain-Source forward voltage V I = 2.2A, V = 0 V (Note3) 0.83 -1.2 V DSF D GS Note3: Pulse test Start of commercial production 2005-06 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3K116TU Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% OUT 2.5 V IN 10% 0 V 0 V DD (c) V 10 s OUT 10% V DD 90% V = 10 V DD V DS (ON) R = 4.7 t t G r f Duty 1% t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Marking Equivalent Circuit (top view) 3 3 KK9 1 2 1 2 Precaution V can be expressed as the voltage between gate and source when the low operating current value is I =0.1mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th, GS (off) voltage than V th. (The relationship can be established as follows: V < V < V ) GS (off) th GS (on) Take this into consideration when using the device. Handling Precaution When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 R G