SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications Unit: mmUnit: mm 1.5 V drive Low ON-resistance: R = 66 m (max) ( V = 1.5 V) on GS R = 43 m (max) ( V = 1.8 V) on GS 2.10.1 R = 32 m (max) ( V = 2.5 V) on GS 1.70.1 R = 28 m (max) ( V = 4.0 V) on GS Absolute Maximum Ratings (Ta = 25C) 1 Characteristics Symbol Rating Unit 3 2 Drain-Source voltage V 20 V DSS Gate-Source voltage V 10 V GSS DC I 4.2 D Drain current A Pulse I 8.4 DP P 800 D (Note 1) Drain power dissipation mW P 500 D (Note 2) Channel temperature T 150 C ch Storage temperature range T 55~150 C stg 1: Gate Note: Using continuously under heavy loads (e.g. the application of 2: Source high temperature/current/voltage and the significant change in UFM 3: Drain temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITJEITA A Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual TTOOSHIBA 2-2U1A SHIBA 2-2U1A reliability data (i.e. reliability test report and estimated failure WWeeight: 6.6 mgight: 6.6 mg (typ.) (typ.) rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm 25.4 mm 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0V 20 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = 10 V 12 (BR) DSX D GS Drain cutoff current I V = 20 V, V = 0V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 3.0 A (Note 3) 12.5 25 S fs DS D I = 3.0 A, V = 4.0 V (Note 3) 19 28 D GS I = 3.0 A, V = 2.5 V (Note 3) 23 32 D GS Drain-Source ON-resistance R m DS (ON) I = 1.0 A, V = 1.8 V (Note 3) 28 43 D GS I = 0.5 A, V = 1.5 V (Note 3) 35 66 D GS Input capacitance C 1010 iss Output capacitance C V = 10 V, V = 0, f = 1 MHz 162 pF DS GS oss Reverse transfer capacitance C 150 rss Total Gate Charge Q 13.6 g GateSource Charge Q V = 10 V, I = 4.2 A, V = 4 V 9.8 nC gs DS DS GS GateDrain Charge Q 3.8 gd Turn-on time t V = 10 V, I = 1.0 A, 17 on DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 30 off Drain-Source forward voltage V I = 4.2 A, V = 0 V (Note 3) 0.8 1.2 V DSF D GS Note 3: Pulse test Start of commercial production 2007-04 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3K123TU Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% OUT 2.5 V IN 10% 0 V 0 V DD (c) V OUT 10 s 10% V DD 90% V = 10 V DD V DS (ON) R = 4.7 t t G r f Duty 1% t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Marking Equivalent Circuit (top view) 3 3 KKD 1 2 1 2 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th, GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G