X-On Electronics has gained recognition as a prominent supplier of SSM3J134TU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J134TU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J134TU,LF Toshiba

SSM3J134TU,LF electronic component of Toshiba
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Part No.SSM3J134TU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=-3.2A VDSS=-20V
Datasheet: SSM3J134TU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3531 ea
Line Total: USD 0.35 
Availability - 9535
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9535
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3531
10 : USD 0.2387
100 : USD 0.1628
500 : USD 0.1309
1000 : USD 0.1199
3000 : USD 0.0979
9000 : USD 0.0968
24000 : USD 0.0913

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3J134TU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J134TU,LF and other electronic components in the MOSFETs category and beyond.

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SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J134TU Power Management Switch Applications Unit: mm 1.5 V drive Low ON-resistance: R = 240 m (max) ( V = -1.5 V) DS(ON) GS R = 168 m (max) ( V = -1.8 V) DS(ON) GS R = 123 m (max) ( V = -2.5 V) DS(ON) GS R = 93 m (max) ( V = -4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V DSS Gate-Source voltage V 8 V GSS DC I (Note 1) -3.2 D Drain current A Pulse I (Note 1) -6.4 DP P (Note 2) 500 D Power dissipation mW t < 1s 1000 Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high 1: Gate temperature/current/voltage and the significant change in 2: Source temperature, etc.) may cause this product to decrease in the UFM 3: Drain reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEDEC Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual TOSHIBA 2-2U1A reliability data (i.e. reliability test report and estimated failure rate, Weight: 6.6mg (typ.) etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 JJM 1 2 1 2 Start of commercial production 2011-02 1 2014-03-01 SSM3J134TU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V .(Note 4) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 2.9 5.8 S fs DS D I = -1.5 A, V = -4.5 V (Note 3) 78.5 93 D GS I = -1.0 A, V = -2.5 V (Note 3) 97.5 123 D GS Drainsource ON-resistance R m DS (ON) I = -0.5 A, V = -1.8 V (Note 3) 120 168 D GS I = -0.25 A, V = -1.5 V (Note 3) 141 240 D GS Input capacitance C 290 iss V = -10 V, V = 0 V DS GS pF Output capacitance C 44 oss f = 1 MHz Reverse transfer capacitance C 32 rss Turn-on time t V = -10 V, I = -0.5 A 12 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 46.2 GS G off Total gate charge Q 4.7 g V = -10 V, I = -2.0 A, DD D nC Gate-source charge Q 0.4 gs1 V = -4.5 V GS Gate-drain charge Q 1.0 gd Drain-source forward voltage V I = 3.2 A, V = 0 V (Note 3) 0.9 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V mode. Note that the (BR)DSX drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit 0 V (a) Test Circuit (b) V IN 90% OUT 0 IN 10% 2.5 V 2.5V R L V DS (ON) 90% (c) V 10 s OUT V DD V = 10 V 10% DD V DD R = 4.7 G t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = -1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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