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X-On Electronics has gained recognition as a prominent supplier of RSJ301N10FRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSJ301N10FRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSJ301N10FRATL ROHM

RSJ301N10FRATL electronic component of ROHM
RSJ301N10FRATL ROHM
RSJ301N10FRATL MOSFETs
RSJ301N10FRATL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RSJ301N10FRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 100V Vds 30A 0.036Rds(on) 60Qg
Datasheet: RSJ301N10FRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.175 ea
Line Total: USD 3.18 
Availability - 190
Ship by Wed. 12 Mar to Fri. 14 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
190
Ship by Wed. 12 Mar to Fri. 14 Mar
MOQ : 1
Multiples : 1
1 : USD 3.175
10 : USD 2.196
100 : USD 1.518
500 : USD 1.254
1000 : USD 1.221
2000 : USD 1.166

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSJ301N10FRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSJ301N10FRATL and other electronic components in the MOSFETs category and beyond.

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RSJ301N10FRA Datasheet Nch 100V 30A Power MOSFET llOutline TO-263S V 100V DSS SC-83 R (Max.) 46m DS(on) LPT(S) I 30A D P 50W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching speed 3) High power small mold package 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Quantity (pcs) 1000 Taping code TL Marking RSJ301N10 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 100 V DSS *1 I Continuous drain current 30 A D *2 I Pulsed drain current 60 A DP V Gate - Source voltage 20 V GSS *1 P Power dissipation 50 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.004 RSJ301N10FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 2.5 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V , I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 15A - 33 46 GS D Static drain - source *3 R m DS(on) on - state resistance V = 4.0V, I = 15A - 36 50 GS D R Gate resistance f = 1MHz, open drain - 4.8 - G Forward Transfer *3 Y V = 10V, I = 15A 14 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s, Duty cycle 1% *3 Pulsed www.rohm.com 2/11 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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