Data Sheet AEC-Q101 Qualified 10V Drive Nch MOSFET RSJ400N06RSJ400N06FRA Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High current 0.4 2.54 0.78 3) High power Package 2.7 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 1000 2 RSJ400N06FRARSJ400N06 (1) (2) (3) (1) Gate (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Absolute maximum ratings (T = 25C) a Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GSS Continuous I 40 A D Drain current *1 Pulsed I 80 A DP Continuous I 40 A Source current S *1 (Body Diode) Pulsed I 80 A SP *2 Power dissipation P 50 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55to 150 C *1 Pw10s, Duty cycle1% *2 T =25C c Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 2.5 C / W th (ch-c) * T =25C c www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 1/5 13.1 9.0 3.0 1.0 1.2Data Sheet RSJ400N06)5 Electrical characteristics (T = 25C) a Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 60 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =60V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 3.0 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R -11 16 m I =40A, V =10V DS (on) D GS resistance * Forward transfer admittance l Y l14 - - S I =20A, V =10V fs D DS Input capacitance C - 2400 - pF V =10V iss DS Output capacitance C - 490 - pF V =0V oss GS Reverse transfer capacitance C - 250 - pF f=1MHz rss Turn-on delay time t * - 20 - ns I =20A, V 30V d(on) D DD Rise time t * - 60 - ns V =10V r GS Turn-off delay time t * - 90 - ns R =1.5 d(off) L * Fall time t - 140 - ns R =10 f G * Total gate charge Q - 52 - nC V 30V g DD Gate-source charge Q * -8 - nCI =40A, gs D Gate-drain charge Q * - 15 - nC V =10V gd GS *Pulsed Body diode characteristics (Source-Drain) (T = 25 C) a Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =40A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A