X-On Electronics has gained recognition as a prominent supplier of DMN2028UFU-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2028UFU-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN2028UFU-7 Diodes Incorporated

DMN2028UFU-7 electronic component of Diodes Incorporated
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Part No.DMN2028UFU-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET N-Ch Enh Mode FET 20Vdss 10Vgss 40A
Datasheet: DMN2028UFU-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.517 ea
Line Total: USD 0.52 
Availability - 2636
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2636
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.517
10 : USD 0.3828
100 : USD 0.2607
500 : USD 0.2046
1000 : USD 0.1815
3000 : USD 0.1573

   
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We are delighted to provide the DMN2028UFU-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2028UFU-7 and other electronic components in the MOSFETs category and beyond.

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DMN2028UFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D V R (BR)DSS DS(ON) Max Low Gate Threshold Voltage T = +25C A Low Input Capacitance 20.2m V = 4.5V 7.5A GS 20V Fast Switching Speed 23.5m V = 2.5V 7.0A GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Mechanical Data making it ideal for high efficiency power management applications. Case: U-DFN2030-6 Case Material: Molded Plastic, Green Molding Compound. UL Applications Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram Below Battery Pack Weight: 0.012 grams (Approximate) Load Switch D2 D1 U-DFN2030-6 G2 G1 Gate Protection Gate Protection S1 S2 ESD PROTECTED Diode Diode Equivalent Circuit Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN2028UFU-7 U-DFN2030-6 3000 / Tape & Reel DMN2028UFU-13 U-DFN2030-6 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2028UFU Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 10 V GSS Steady T = +25C 7.5 A I A D State 6.0 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 9.9 A t<10s A I D 7.9 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 40 A DM Avalanche Current (Note 7) L = 0.1mH I 12 A AS Avalanche Energy (Note 7) L = 0.1mH E 8 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.9 W T = +25C P A D Steady State 144 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 84 Total Power Dissipation (Note 6) 1.8 W T = +25C P A D Steady State 69 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 40 C/W Thermal Resistance, Junction to Case 8.4 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.0 V V V = V , I = 250A GS(TH) DS GS D 15.3 20.2 V = 4.5V, I = 4.5A GS D 15.4 22.5 V = 4.0V, I = 4.0A GS D Static Drain-Source On-Resistance R 16.7 23.0 m V = 3.1V, I = 4.0A DS(ON) GS D 18.3 23.5 V = 2.5V, I = 3.5A GS D 24.2 30.0 V = 1.8V, I = 3.5A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 887 Input Capacitance C iss V = 10V, V = 0V, DS GS Output Capacitance 91 pF C oss f = 1.0MHz Reverse Transfer Capacitance 37 C rss Gate Resistance 191 R V = 0V, V = 0V, f = 1MHz g DS GS 10 Total Gate Charge (V = 4.5V) Q GS g 18.4 Total Gate Charge (V = 8V) Q GS g nC V = 10V, I = 6.5A DS D 1.3 Gate-Source Charge Q gs 1.8 Gate-Drain Charge Q gd 53 Turn-On Delay Time t D(ON) 66 Turn-On Rise Time t R V = 10V, V = 4.5V, DS GS ns 619 Turn-Off Delay Time R = 6, R = 10, I = 1A t G L D D(OFF) Turn-Off Fall Time 197 t F Reverse Recovery Time 119 ns t I = 4A, di/dt = 100A/s RR F Reverse Recovery Charge - 96 nC Q I = 4A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMN2028UFU May 2015 Diodes Incorporated www.diodes.com Document number: DS37945 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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