X-On Electronics has gained recognition as a prominent supplier of SP8K52FRATB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SP8K52FRATB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SP8K52FRATB ROHM

SP8K52FRATB electronic component of ROHM
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See Product Specifications
Part No.SP8K52FRATB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch+Nch 100V Vds 3A 0.135Rds(on) 8.5Qg
Datasheet: SP8K52FRATB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.023 ea
Line Total: USD 1.02 
Availability - 369
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
369
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.023
10 : USD 0.7898
100 : USD 0.6336
500 : USD 0.5742
1000 : USD 0.5214
2500 : USD 0.4543

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SP8K52FRATB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SP8K52FRATB and other electronic components in the MOSFETs category and beyond.

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SP8K52FRA Datasheet 100V Nch+Nch Power MOSFET llOutline V 100V DSS R (Max.) 170m DS(on) SOP8 I 3.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Motor Drive Quantity (pcs) 2500 Taping code TB Marking SP8K52 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 100 V DSS Continuous drain current I 3.0 A D *1 I Pulsed drain current 12 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20200317 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs SP8K52FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 3.0A - 120 170 GS D Static drain - source *4 R V = 4.5V, I = 3.0A - 130 180 m DS(on) GS D on - state resistance V = 4.0V, I = 3.0A - 135 190 GS D R Gate resistance f = 1MHz, open drain - 6.9 - G Forward Transfer *4 Y V = 10V, I = 3.0A 3.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20200317 - Rev.002 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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