SP8M4 Transistors 4V Drive Nch+Pch MOSFET SP8M4 z Structure z Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET SOP8 5.0 1.75 0.4 z Features ( ) ( ) 8 5 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). ( ) ( ) 1 4 z Application 0.2 1.27 1pin mark Power switching, DC / DC converter. Each lead has same dimensions z Packaging specifications z Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 2 2 SP8M4 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate 1 1 (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (1) (2) (3) (4) (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain 1 ESD PROTECTION DIODE (8) Tr1 (Nch) Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Nchannel Pchannel V Drain-source voltage DSS 30 30 V Gate-source voltage VGSS 20 20 V Continuous ID 9.0 7.0 A Drain current 1 I Pulsed DP 36 28 A Continuous IS 1.6 1.6 A Source current 1 (Body diode) Pulsed ISP 36 28 A 2 P 2 W Total power dissipation D Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 MOUNTED ON A CERAMIC BOARD. z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. Rev.B 1/5 3.9 6.0 0.4Min.SP8M4 Transistors N-ch z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =30V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 12 18 ID=9.0A, VGS=10V Static drain-source on-state R 16 24 m I =9.0A, V =4.5V DS (on) D GS resistance 17 25 ID=9.0A, VGS=4V Forward transfer admittance Yfs 7.0 SID=9.0A, VDS=10V Input capacitance C 1190 pF V =10V iss DS Output capacitance Coss 340 pF VGS=0V Reverse transfer capacitance Crss 190 pF f=1MHz Turn-on delay time t 10 ns I =4.5A, V 15V d (on) D DD Rise time tr 15 ns VGS=10V Turn-off delay time td (off) 55 ns RL=3.33 Fall time t 22 ns R =10 f G Total gate charge Qg 15 nC VDD 15V Gate-source charge Qgs 3.0 nC VGS=5V Gate-drain charge Q 6.1 nC I =9.0A gd D Pulsed z Body diode characteristics (Source-Drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed Rev.B 2/5