X-On Electronics has gained recognition as a prominent supplier of IPD60R180C7ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD60R180C7ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD60R180C7ATMA1 Infineon

IPD60R180C7ATMA1 electronic component of Infineon
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Part No.IPD60R180C7ATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET HIGH POWER_NEW
Datasheet: IPD60R180C7ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.475 ea
Line Total: USD 2.48 
Availability - 4890
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 2.7313
10 : USD 2.4029
30 : USD 2.2081
100 : USD 2.0101
500 : USD 1.92
1000 : USD 1.8785

4890
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 2.475
10 : USD 1.76
100 : USD 1.331
500 : USD 1.199
1000 : USD 1.155
2500 : USD 1.144
5000 : USD 1.122
10000 : USD 1.111

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the IPD60R180C7ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD60R180C7ATMA1 and other electronic components in the MOSFETs category and beyond.

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IPD60R180C7 MOSFET DPAK 600V CoolMOS C7 Power Device CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technology ever with R *A below 1Ohm*mm. DS(on) 3 Features Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns Drain Increased efficiency due to best in class FOM R *E and R *Q Pin 2, Tab DS(on) oss DS(on) g Best in class R /package DS(on) *1 Gate Pin 1 Benefits Increased economies of scale by use in PFC and PWM topologies in the Source *1: Internal body diode Pin 3 application Higher dv/dt limit enables faster switching leading to higher efficiency Enabling higher system efficiency by lower switching losses Increased power density solutions due to smaller packages Suitable for applications such as server, telecom and solar Higher switching frequencies possible without loss in efficiency due to low Eoss and Qg Potential applications PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max RDS(on),max 180 m Qg.typ 24 nC I 45 A D,pulse I T<150C 22 A D,continuous j E 400V 2.7 J oss Body diode di/dt 350 A/s Type / Ordering Code Package Marking Related Links IPD60R180C7 PG-TO252-3 60C7180 see Appendix A Final Data Sheet 1 Rev. 2.1, 2020-05-26600V CoolMOS C7 Power Device IPD60R180C7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2020-05-26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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