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X-On Electronics has gained recognition as a prominent supplier of RD3U060CNTL1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3U060CNTL1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3U060CNTL1 ROHM

RD3U060CNTL1 electronic component of ROHM
RD3U060CNTL1 ROHM
RD3U060CNTL1 MOSFETs
RD3U060CNTL1  Semiconductors

Images are for reference only
See Product Specifications
Part No. RD3U060CNTL1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 250V 6A TO-252 (DPAK)
Datasheet: RD3U060CNTL1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5875 ea
Line Total: USD 1.59 
Availability - 1953
Ship by Fri. 02 May to Tue. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1953
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 1.5875
10 : USD 1.1796
100 : USD 0.8085
500 : USD 0.6765
1000 : USD 0.6435
2500 : USD 0.5951

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RD3U060CNTL1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3U060CNTL1 and other electronic components in the MOSFETs category and beyond.

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RD3U060CN Datasheet Nch 250V 6A Power MOSFET llOutline V 250V DSS DPAK R (Max.) 530m DS(on) TO-252 I 6A D P 52W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Power Supply Quantity (pcs) 2500 Taping code TL1 Marking RD3U060CN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 T = 25C I 6 A c D Continuous drain current *1 T = 100C I 3.3 A c D *2 I Pulsed drain current 24 A DP V Gate - Source voltage 30 V GSS *3 E Avalanche energy, single pulse 2.62 mJ AS *3 I Avalanche current, single pulse 3 A AS Power dissipation (T = 25C) P 52 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190603 - Rev.004 RD3U060CN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.36 /W thJC T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 250 - - V (BR)DSS GS D voltage V = 250V, V = 0V DS GS Zero gate voltage I A DSS drain current T = 25C - - 10 j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.0 - 5.0 V GS(th) DS D Static drain - source *4 R V = 10V, I = 3A - 410 530 m DS(on) GS D on - state resistance Forward Transfer *4 Y V = 10V, I = 3.75A 2.2 4.4 - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 500H, V = 50V, R = 25, starting T = 25C DD G j *4 Pulsed www.rohm.com 2/11 20190603 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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