X-On Electronics has gained recognition as a prominent supplier of RDR005N25TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RDR005N25TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RDR005N25TL ROHM

RDR005N25TL electronic component of ROHM
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Part No.RDR005N25TL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 250 V 500mA (Ta) 540mW (Ta) Surface Mount TSMT3
Datasheet: RDR005N25TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2223 ea
Line Total: USD 1.11 
Availability - 873
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
873
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2223
50 : USD 0.1792
150 : USD 0.1605
500 : USD 0.1373
3000 : USD 0.1177
6000 : USD 0.1115

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Factory Pack Quantity :
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RDR005N25TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RDR005N25TL and other electronic components in the MOSFETs category and beyond.

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RDR005N25 Nch 250V 0.5A Power MOSFET Datasheet l Outline V 250V DSS (3) TSMT3 (SC-96) R (Max.) 8.8W DS(on) (1) I 0.5A D P 1.0W (2) D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Source 3) Drive circuits can be simple. (3) Drain 4) Parallel use is easy. *1 BODY DIODE *2 ESD PROTECTION DIODE 5) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 Switching Power Supply Type Basic ordering unit (pcs) 3,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking EE lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 T = 25C I 0.5 A c D Continuous drain current *1 T = 100C A I 0.27 c D *2 Pulsed drain current I 2.0 A D,pulse Gate - Source voltage V V 20 GSS *3 P 1.0 W D Power dissipation *4 P 0.54 W D Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 1/12 Not Recommended for New DesignsData Sheet RDR005N25 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 C/W thJA Thermal resistance, junction - ambient *4 R - - 232 C/W thJA lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V V = 0V, I = 1mA 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS - - 25 T = 25C j I Zero gate voltage drain current mA DSS V = 250V, V = 0V DS GS - - 100 T = 125C j Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 3.0 V GS (th) DS D V = 10V, I = 0.25A - 6.8 8.8 GS D V = 4.5V, I = 0.25A 7.2 9.4 GS D Static drain - source *5 V = 4V, I = 0.25A 7.4 9.6 R W GS D DS(on) on - state resistance V = 10V, I = 0.25A GS D - 12.8 18.0 T = 125C j g V = 10V, I = 0.25A Forward transfer admittance 0.21 0.42 - S fs DS D www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.02 - Rev.A 2/12 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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