X-On Electronics has gained recognition as a prominent supplier of RE1C001UNTCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RE1C001UNTCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RE1C001UNTCL ROHM

RE1C001UNTCL electronic component of ROHM
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See Product Specifications
Part No.RE1C001UNTCL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL)
Datasheet: RE1C001UNTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.045 ea
Line Total: USD 0.45 
Availability - 1094
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1094
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 10
Multiples : 10
10 : USD 0.045
100 : USD 0.0369
300 : USD 0.0328
3000 : USD 0.0299
6000 : USD 0.0274
9000 : USD 0.0262

1100
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2321
10 : USD 0.1474
100 : USD 0.0682
1000 : USD 0.0616
3000 : USD 0.0484
9000 : USD 0.0429
45000 : USD 0.0407
99000 : USD 0.0396

35870
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 736
Multiples : 1
736 : USD 0.1335
1000 : USD 0.1292
2500 : USD 0.1254
5000 : USD 0.1221
10000 : USD 0.1191
25000 : USD 0.1164

22505
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 736
Multiples : 1
736 : USD 0.1335
1000 : USD 0.1292
2500 : USD 0.1254
5000 : USD 0.1221
10000 : USD 0.1191

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the RE1C001UNTCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RE1C001UNTCL and other electronic components in the MOSFETs category and beyond.

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RE1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET llOutline SOT-416FL V 20V DSS SC-89 R (Max.) 3.5 DS(on) EMT3F I 100mA D P 150mW D llInner circuit llFeatures 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking RW llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 100 mA D *1 I Pulsed drain current 400 mA DP V Gate - Source voltage 8 V GSS *2 P Power dissipation 150 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 RE1C001UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 833 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 100A 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 100mA - 2.5 3.5 GS D V = 2.5V, I = 100mA - 3.0 4.2 GS D V = 1.8V, I = 50mA - 3.8 5.3 GS D Static drain - source *3 R V = 1.5V, I = 20mA - 4.5 9.0 DS(on) GS D on - state resistance V = 1.2V, I = 10mA - 6.0 18.0 GS D V = 4.5V, I = 100mA GS D - 4.0 5.6 T = 125 j Forward Transfer *3 Y V = 10V, I = 100mA 180 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160624 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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