X-On Electronics has gained recognition as a prominent supplier of RE1C001UNTCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RE1C001UNTCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RE1C001UNTCL ROHM

RE1C001UNTCL electronic component of ROHM
RE1C001UNTCL ROHM
RE1C001UNTCL MOSFETs
RE1C001UNTCL  Semiconductors

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See Product Specifications
Part No. RE1C001UNTCL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL)
Datasheet: RE1C001UNTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0666 ea
Line Total: USD 0.67 
Availability - 3482
Ship by Wed. 14 May to Mon. 19 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
3482
Ship by Wed. 14 May to Mon. 19 May
MOQ : 10
Multiples : 10
10 : USD 0.0666
100 : USD 0.0538
300 : USD 0.0472
3000 : USD 0.0286
6000 : USD 0.0259
9000 : USD 0.0246

5123
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 0.3175
10 : USD 0.1912
100 : USD 0.0756
500 : USD 0.0702
3000 : USD 0.0495
6000 : USD 0.0462
9000 : USD 0.0418
24000 : USD 0.0407

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the RE1C001UNTCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RE1C001UNTCL and other electronic components in the MOSFETs category and beyond.

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RE1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET llOutline SOT-416FL V 20V DSS SC-89 R (Max.) 3.5 DS(on) EMT3F I 100mA D P 150mW D llInner circuit llFeatures 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking RW llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 100 mA D *1 I Pulsed drain current 400 mA DP V Gate - Source voltage 8 V GSS *2 P Power dissipation 150 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 RE1C001UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R Thermal resistance, junction - ambient - - 833 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 100A 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 100mA - 2.5 3.5 GS D V = 2.5V, I = 100mA - 3.0 4.2 GS D V = 1.8V, I = 50mA - 3.8 5.3 GS D Static drain - source *3 R V = 1.5V, I = 20mA - 4.5 9.0 DS(on) GS D on - state resistance V = 1.2V, I = 10mA - 6.0 18.0 GS D V = 4.5V, I = 100mA GS D - 4.0 5.6 T = 125 j Forward Transfer *3 Y V = 10V, I = 100mA 180 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160624 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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