X-On Electronics has gained recognition as a prominent supplier of IRF840PBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRF840PBF MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRF840PBF Vishay

IRF840PBF electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.IRF840PBF
Manufacturer: Vishay
Category: MOSFET
Description: N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet: IRF840PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.114 ea
Line Total: USD 1.11

Availability - 5185
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4700
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 39
Multiples : 1
39 : USD 0.8385
50 : USD 0.8385
200 : USD 0.8385
750 : USD 0.8385
2500 : USD 0.8385

5185
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 1.114
10 : USD 0.9261
50 : USD 0.7697
100 : USD 0.6777
500 : USD 0.6206
1000 : USD 0.5929

2586
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 1.656
10 : USD 1.403
100 : USD 1.1465
250 : USD 1.0649
500 : USD 0.9879
1000 : USD 0.8659
2000 : USD 0.8556
10000 : USD 0.8245

392
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 2.145
3 : USD 1.937
10 : USD 1.69
19 : USD 0.91
50 : USD 0.871

933
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 10
Multiples : 1
10 : USD 1.7417
100 : USD 1.3949
250 : USD 1.2856
500 : USD 1.1662
1000 : USD 1.0496
2000 : USD 0.9594
5000 : USD 0.9386

7780
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 13
Multiples : 1
13 : USD 1.3482
100 : USD 1.1487
250 : USD 1.0781
500 : USD 0.9996
1000 : USD 0.9205
2000 : USD 0.8567
5000 : USD 0.8174
10000 : USD 0.8094

5917
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 50
Multiples : 50
50 : USD 1.4334
1600 : USD 1.3098
3200 : USD 1.2186
4800 : USD 1.1493

2813
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 50
Multiples : 50
50 : USD 1.4334
800 : USD 1.3098
1600 : USD 1.2186
2400 : USD 1.1493

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
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Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRF840PBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF840PBF and other electronic components in the MOSFET category and beyond.

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The IRF840PBF is a N-Channel MOSFET made by Vishay. This part has a breakdown voltage of 500V and can handle currents up to 8A (Tc). It has a power dissipation of 125W (Tc) and a package type of Through Hole TO-220AB. This part is designed for power switching applications such as AC motor speed control, switch mode power supplies, voltage regulator and lighting systems. It features extremely low on-state resistance to enable more efficient power control. The device contains an integrated gate protection diode and a zener diode in order to protect against ESD damage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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