X-On Electronics has gained recognition as a prominent supplier of IRF9510SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9510SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9510SPBF Vishay

Hot IRF9510SPBF electronic component of Vishay
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Part No.IRF9510SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P-Chan 100V 4.0 Amp
Datasheet: IRF9510SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.106 ea
Line Total: USD 1.11 
Availability - 700
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
670
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6385
10 : USD 1.5047
50 : USD 1.4204
100 : USD 1.3344
500 : USD 1.2944
1000 : USD 1.2791

1628
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.024
10 : USD 1.4605
100 : USD 1.0499
250 : USD 1.0488
500 : USD 0.9476
1000 : USD 0.9465

700
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.106
3 : USD 0.8498
10 : USD 0.7518
27 : USD 0.644
74 : USD 0.616

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.1944
2000 : USD 1.1579

   
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We are delighted to provide the IRF9510SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9510SPBF and other electronic components in the MOSFETs category and beyond.

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IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) - 100 Definition DS Surface Mount R ( )V = - 10 V 1.2 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 8.7 g Dynamic dV/dt Rating Q (nC) 2.2 gs Repetitive Avalanche Rated P-Channel Q (nC) 4.1 gd 175 C Operating Temperature Configuration Single Fast Switching Compliant to RoHS Directive 2002/95/EC S 2 DESCRIPTION D PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides D G the highest power capability and the lowest possible D S on-resistance in any existing surface mount package. The 2 P-Channel MOSFET D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHF9510S-GE3 SiHF9510STRL-GE3 a IRF9510SPbF IRF9510STRLPbF Lead (Pb)-free a SiHF9510S-E3 SiHF9510STL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 100 DS V Gate-Source Voltage V 20 GS T = 25 C - 4.0 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 2.8 A C a Pulsed Drain Current I - 16 DM Linear Derating Factor 0.29 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 200 mJ AS a Avalanche Current I - 4.0 A AR a Repetiitive Avalanche Energy E 4.3 mJ AR = 25 C 43 Maximum Power Dissipation T C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.7 A c Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 18 mH, R = 25 , I = - 4.0 A (see fig. 12). DD J g AS c. I - 4.0 A, dI/dt 75 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91073 www.vishay.com S11-1050-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9510S, SiHF9510S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -3.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.091 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 100 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 80 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 2.4 A -- 1.2 DS(on) GS D b Forward Transconductance g V = - 50 V, I = - 2.4 A 1.0 - - S fs DS D Dynamic Input Capacitance C - 200 - iss V = 0 V, GS Output Capacitance C -9V = - 25 V, 4- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -18- rss Total Gate Charge Q -- 8.7 g I = - 4.0 A, V = - 80 V, D DS Gate-Source Charge Q --V = - 10 V 2.2 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --4.1 gd Turn-On Delay Time t -10 - d(on) Rise Time t -27 - r V = - 50 V, I = - 4.0 A, DD D ns b R = 24 , R = 11 , see fig. 10 g D Turn-Off Delay Time t -15- d(off) Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 4.0 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- - 16 SM S b Body Diode Voltage V T = 25 C, I = - 4.0 A, V = 0 V -- - 5.5 V SD J S GS Body Diode Reverse Recovery Time t - 82 160 ns rr b T = 25 C, I = - 4.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.15 0.30 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91073 2 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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