IRF9910PbF HEXFET Power MOSFET Applications V I R max Dual SO-8 MOSFET for POL DSS D DS(on) converters in desktop, servers, 20V Q1 13.4m V = 10V 10A GS graphics cards, game consoles and set-top box 9.3m V = 10V Q2 12A GS Lead-Free Benefits Very Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 20V V Max. Gate Rating GS SO-8 Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 10 12 A GS D I T = 70C Continuous Drain Current, V 10V GS 8.3 9.9 A D A Pulsed Drain Current I 83 98 DM P T = 25C Power Dissipation 2.0 W D A P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 0.016 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R JL Junction-to-Drain Lead 42 C/W R JA 62.5 Junction-to-Ambient Notes through are on page 10 www.irf.com 1 07/23/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage Q1&Q2 20 V GS D DSS Reference to 25C, I = 1mA V / T Breakdown Voltage Temp. Coefficient Q1 0.0061 V/C D DSS J Q2 0.014 Q1 10.7 13.4 V = 10V, I = 10A GS D R DS(on) Static Drain-to-Source On-Resistance 14.6 18.3 m VGS = 4.5V, ID = 8.3A V = 10V, I = 12A Q2 7.4 9.3 GS D V = 4.5V, I = 9.8A 9.1 11.3 GS D V Gate Threshold Voltage Q1&Q2 1.65 2.55 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient Q1 -4.9 mV/C GS(th) J Q2 -5.0 V = 16V, V = 0V I Drain-to-Source Leakage Current Q1&Q2 1.0 A DS GS DSS V = 16V, V = 0V, T = 125C Q1&Q2 100 DS GS J I Gate-to-Source Forward Leakage Q1&Q2 100 nA V = 20V GS GSS Gate-to-Source Reverse Leakage Q1&Q2 -100 V = -20V GS V = 10V, I = 8.3A gfs Forward Transconductance Q1 19 S DS D V = 10V, I = 9.8A Q2 27 DS D Q Total Gate Charge Q1 7.4 11 g Q2 15 23 Q Pre-Vth Gate-to-Source Charge Q1 2.6 Q1 gs1 Q2 4.3 V = 10V DS Q Post-Vth Gate-to-Source Charge Q1 0.85 nC V = 4.5V, I = 8.3A gs2 GS D Q2 1.4 Q Gate-to-Drain Charge Q1 2.5 Q2 gd Q2 5.4 V = 10V DS Q Gate Charge Overdrive Q1 1.5 V = 4.5V, I = 9.8A godr GS D Q2 3.9 Q Switch Charge (Q + Q ) Q1 3.4 sw gs2 gd Q2 6.8 Q Output Charge Q1 4.0 nC V = 10V, V = 0V oss DS GS Q2 8.7 t Turn-On Delay Time Q1 6.3 Q1 d(on) V = 16V, V = 4.5V Q2 8.3 DD GS t Rise Time Q1 10 I = 8.3A r D Q2 14 ns t Turn-Off Delay Time Q1 9.2 Q2 d(off) V = 16V, V = 4.5V Q2 15 DD GS t Fall Time Q1 4.5 I = 9.8A f D Q2 7.5 Clamped Inductive Load C Input Capacitance Q1 900 iss V = 0V Q2 1860 GS V = 10V C Output Capacitance Q1 290 pF DS oss Q2 600 = 1.0MHz C Reverse Transfer Capacitance Q1 140 rss Q2 310 Avalanche Characteristics Parameter Q1 Max. Q2 Max. Units Typ. Single Pulse Avalanche Energy E 33 26 mJ AS I Avalanche Current 8.3 9.8 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current Q1&Q2 2.5 A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current Q1 83 A integral reverse SM (Body Diode) Q2 98 p-n junction diode. S T = 25C, I = 8.3A, V = 0V V Diode Forward Voltage Q1 1.0 V SD J S GS T = 25C, I = 9.8A, V = 0V Q2 1.0 J S GS Q1 T = 25C, I = 8.3A, t Reverse Recovery Time Q1 11 17 ns J F rr Q2 16 24 V = 10V, di/dt = 100A/s DD Q Reverse Recovery Charge Q1 3.1 4.7 nC Q2 T = 25C, I = 9.8A, rr J F Q2 4.9 7.3 V = 10V, di/dt = 100A/s DD 2 www.irf.com