IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 200 DS Available Repetitive Avalanche Rated R ()V = - 10 V 0.50 DS(on) GS RoHS* P-Channel COMPLIANT Q (Max.) (nC) 44 g Fast Switching Q (nC) 7.1 gs Ease of Paralleling Q (nC) 27 gd Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC S DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D G D and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9640PbF Lead (Pb)-free SiHF9640-E3 IRF9640 SnPb SiHF9640 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 200 V DS Gate-Source Voltage V 20 V GS T = 25 C - 11 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 6.8 A C a Pulsed Drain Current I - 44 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 700 mJ AS a Repetitive Avalanche Current I - 11 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 50 V, starting T = 25 C, L = 8.7 mH, R = 25 , I = - 11 A (see fig. 12). DD J g AS c. I - 11 A, dI/dt 150 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91086 www.vishay.com S11-0513-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9640, SiHF9640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 200 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - -0.2 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - GS(th) DS GS D - 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 160 V, V = 0 V, T = 125 C - - DS GS J - 500 b Drain-Source On-State Resistance R V = - 10 V I = - 6.6 A -- DS(on) GS D 0.50 b Forward Transconductance g V = - 50 V, I = - 6.6 A 4.1 - - fs DS D S Dynamic V = 0 V, Input Capacitance C - 1200 - GS iss Output Capacitance C -V = - 25 V, 370- pF oss DS Reverse Transfer Capacitance C -81- f = 1.0 MHz, see fig. 5 rss Total Gate Charge Q -- 44 g I = - 11 A, V = - 160 V, D DS Gate-Source Charge Q --V = - 10 V 7.1 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --27 gd Turn-On Delay Time t -14 - d(on) Rise Time t -43 - r V = - 100 V, I = - 11 A DD D ns Turn-Off Delay Time t -39- d(off) b R = 9.1 , R = 8.6 , see fig. 10 g D Fall Time t -38- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 11 S showing the A G integral reverse a Pulsed Diode Forward Current I -- - 44 SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = - 11 A, V = 0 V - 5 V J S GS Body Diode Reverse Recovery Time t - rr 250 300 ns b T = 25 C, I = - 11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 2.9 3.6 C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91086 2 S11-0513-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000