PD - 95535 IRFB23N15DPbF IRFS23N15DPbF SMPS MOSFET IRFSL23N15DPbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 150V 0.090 23A Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) 2 TO-220AB D Pak TO-262 Fully Characterized Avalanche Voltage IRFB23N15D IRFS23N15D IRFSL23N15D and Current Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 23 D C GS I T = 100C Continuous Drain Current, V 10V 17 A D C GS I Pulsed Drain Current 92 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 136 D C Linear Derating Factor 0.9 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 4.1 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Typical SMPS Topologies Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes through are on page 11 www.irf.com 1 IRFB/IRFS/IRFSL23N15DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.18 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.090 V = 10V, I = 14A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 120V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 11 S V = 25V, I = 14A fs DS D Q Total Gate Charge 37 56 I = 14A g D Q Gate-to-Source Charge 9.6 14 nC V = 120V gs DS Q Gate-to-Drain Mille) Charge 19 29 V = 10V, gd GS t Turn-On Delay Time 10 V = 75V d(on) DD t Rise Time 32 I = 14A r D ns t Turn-Off Delay Time 18 R = 5.1 d(off) G t Fall Time 8.4 V = 10V f GS C Input Capacitance 1200 V = 0V iss GS C Output Capacitance 260 V = 25V oss DS C Reverse Transfer Capacitance 65 pF = 1.0MHz rss C Output Capacitance 1520 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 120 V = 0V, V = 120V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 210 V = 0V, V = 0V to 120V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 260 mJ AS I Avalanche Current 14 A AR E Repetitive Avalanche Energy 13.6 mJ AR Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.1 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient 40 JA Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 23 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 92 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 14A, V = 0V SD J S GS t Reverse Recovery Time 150 220 ns T = 25C, I = 14A rr J F Q Reverse RecoveryCharge 0.8 1.2 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com