X-On Electronics has gained recognition as a prominent supplier of IRFB23N15DPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB23N15DPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB23N15DPBF Infineon

IRFB23N15DPBF electronic component of Infineon
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See Product Specifications
Part No.IRFB23N15DPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 150V 23A 5.5V @ 250uA 90 mΩ @ 14A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRFB23N15DPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 15
Multiples : 50
15 : USD 1.0682
150 : USD 0.9717
750 : USD 0.843
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Multiples : 1000
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Multiples : 0
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MOQ : 1
Multiples : 1
1 : USD 3.0869
10 : USD 2.5562
30 : USD 2.1716
100 : USD 1.8526
500 : USD 1.7992
1000 : USD 1.7723
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.7054
10 : USD 1.3056
100 : USD 0.6764
10000 : USD 0.6187
25000 : USD 0.6048
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0912
3 : USD 0.9396
9 : USD 0.6804
40 : USD 0.648
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0
MOQ : 50
Multiples : 50
50 : USD 0.5942
100 : USD 0.559
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0
MOQ : 12
Multiples : 12
12 : USD 0.6351
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0
MOQ : 23
Multiples : 23
23 : USD 1.1264
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Obsolete
0
MOQ : 12
Multiples : 12
12 : USD 0.7437
100 : USD 0.691
500 : USD 0.6652
1000 : USD 0.6519
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFB23N15DPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB23N15DPBF and other electronic components in the MOSFETs category and beyond.

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PD - 95535 IRFB23N15DPbF IRFS23N15DPbF SMPS MOSFET IRFSL23N15DPbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 150V 0.090 23A Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) 2 TO-220AB D Pak TO-262 Fully Characterized Avalanche Voltage IRFB23N15D IRFS23N15D IRFSL23N15D and Current Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 23 D C GS I T = 100C Continuous Drain Current, V 10V 17 A D C GS I Pulsed Drain Current 92 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 136 D C Linear Derating Factor 0.9 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 4.1 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Typical SMPS Topologies Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes through are on page 11 www.irf.com 1 IRFB/IRFS/IRFSL23N15DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.18 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.090 V = 10V, I = 14A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 120V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 11 S V = 25V, I = 14A fs DS D Q Total Gate Charge 37 56 I = 14A g D Q Gate-to-Source Charge 9.6 14 nC V = 120V gs DS Q Gate-to-Drain Mille) Charge 19 29 V = 10V, gd GS t Turn-On Delay Time 10 V = 75V d(on) DD t Rise Time 32 I = 14A r D ns t Turn-Off Delay Time 18 R = 5.1 d(off) G t Fall Time 8.4 V = 10V f GS C Input Capacitance 1200 V = 0V iss GS C Output Capacitance 260 V = 25V oss DS C Reverse Transfer Capacitance 65 pF = 1.0MHz rss C Output Capacitance 1520 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 120 V = 0V, V = 120V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 210 V = 0V, V = 0V to 120V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 260 mJ AS I Avalanche Current 14 A AR E Repetitive Avalanche Energy 13.6 mJ AR Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.1 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA R Junction-to-Ambient 40 JA Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 23 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 92 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 14A, V = 0V SD J S GS t Reverse Recovery Time 150 220 ns T = 25C, I = 14A rr J F Q Reverse RecoveryCharge 0.8 1.2 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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