X-On Electronics has gained recognition as a prominent supplier of IRF9640SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9640SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9640SPBF Vishay

Hot IRF9640SPBF electronic component of Vishay
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Part No.IRF9640SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 200 V 11A (Tc) 3W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
Datasheet: IRF9640SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.8905 ea
Line Total: USD 44.52 
Availability - 970
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
970
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 50
Multiples : 50
50 : USD 0.8905
200 : USD 0.8905
750 : USD 0.8905
2000 : USD 0.8905
5000 : USD 0.8905

1059
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7694
10 : USD 1.4965
50 : USD 1.2576
100 : USD 1.0867
500 : USD 1.0129
1000 : USD 0.9788

1193
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.967
10 : USD 2.0355

806
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 3.178
10 : USD 1.932
16 : USD 1.12
44 : USD 1.05
2000 : USD 1.022

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRF9640SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9640SPBF and other electronic components in the MOSFETs category and beyond.

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IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) -200 Available in tape and reel DS Dynamic dV/dt rating R ( )V = -10 V 0.50 DS(on) GS Available Repetitive avalanche rated Q max. (nC) 44 g P-channel Q (nC) 7.1 gs Fast switching Available Q (nC) 27 Ease of paralleling gd Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc 99912 Note S * This datasheet provides information about parts that are 2 RoHS-compliant and / or parts that are non-RoHS-compliant. For 2 D PAK (TO-263) I PAK (TO-262) example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION G Third generation power MOSFETs from Vishay provide the D S designer with the best combination of fast switching, D S G ruggedized device design, low on-resistance and cost-effectiveness. 2 D The D PAK (TO-263) is a surface mount power package. It provides the highest power capability and the lowest P-Channel MOSFET possible on-resistance in any existing surface mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9640L, SiHF9640L) is available for low-profile applications. ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF9640S-GE3 - - SiHF9640L-GE3 a a IRF9640SPbF IRF9640STRLPbF IRF9640STRRPbF IRF9640LPbF Lead (Pb)-free a a SiHF9640S-E3 SiHF9640STL-E3 SiHF9640STR-E3 SiHF9640L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -200 DS V Gate-Source Voltage V 20 GS T = 25 C -11 C Continuous Drain Current V at -10 V I GS D T = 100 C -6.8 A C a Pulsed Drain Current I -44 DM Linear Derating Factor 1.0 W/C e Linear Derating Factor (PCB mount) 0.025 b Single Pulse Avalanche Energy E 700 mJ AS a Avalanche Current I -11 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C 125 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.0 A c Peak Diode Recovery dV/d dV/dt -5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = -50 V, starting T = 25 C, L = 8.7 mH, R = 25 , I = -11 A (see fig. 12). DD J g AS c. I -11 A, dI/dt 150 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-0754-Rev. E, 02-May-16 Document Number: 91087 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.20 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -200 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -160 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = 6.6 A - - 0.50 DS(on) GS D b Forward Transconductance g V = -50 V, I = -6.6 A 4.1 - - S fs DS D Dynamic Input Capacitance C - 1200 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 370- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -81- rss Total Gate Charge Q -- 44 g I = -11 A, V = -160 V, D DS Gate-Source Charge Q --V = -10 V 7.1 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --27 gd Turn-On Delay Time t -14 - d(on) Rise Time t -43 - r V = -100 V, I = -11 A, DD D ns b R = 9.1 , R = 8.6 , see fig. 10 Turn-Off Delay Time t -3g D 9- d(off) Fall Time t -38- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Gate Input Resistance R f = 1 MHz, open drain 0.3 - 1.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -11 S showing the A integral reverse G a p -n junction diode Pulsed Diode Forward Current I -- -44 SM S b Body Diode Voltage V T = 25 C, I = -11 A, V = 0 V -- -5.0 V SD J S GS Body Diode Reverse Recovery Time t - 250 300 ns rr b T = 25 C, I = -11 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.9 3.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. E, 02-May-16 Document Number: 91087 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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