X-On Electronics has gained recognition as a prominent supplier of IRF9630STRLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9630STRLPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9630STRLPBF Vishay

IRF9630STRLPBF electronic component of Vishay
IRF9630STRLPBF Vishay
IRF9630STRLPBF MOSFETs
IRF9630STRLPBF  Semiconductors

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See Product Specifications
Part No. IRF9630STRLPBF
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 200 V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)
Datasheet: IRF9630STRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.0875 ea
Line Total: USD 3.09 
Availability - 941
Ship by Tue. 11 Mar to Thu. 13 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6
Ship by Thu. 20 Mar to Tue. 25 Mar
MOQ : 1
Multiples : 1
1 : USD 6.5562
10 : USD 4.3833
30 : USD 3.9825
100 : USD 3.2575
500 : USD 3.0703
800 : USD 2.986

941
Ship by Tue. 11 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 3.0875
10 : USD 2.208
25 : USD 2.068
100 : USD 1.639
500 : USD 1.496
800 : USD 1.353
2400 : USD 1.331
4800 : USD 1.309

85
Ship by Thu. 13 Mar to Wed. 19 Mar
MOQ : 26
Multiples : 1
26 : USD 2.5363
30 : USD 2.1684
40 : USD 1.638

524
Ship by Thu. 13 Mar to Wed. 19 Mar
MOQ : 34
Multiples : 1
34 : USD 1.898
50 : USD 1.872

   
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RoHS - XON
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Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the IRF9630STRLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9630STRLPBF and other electronic components in the MOSFETs category and beyond.

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IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) -200 Available in tape and reel DS Dynamic dV/dt rating R ( )V = -10 V 0.80 DS(on) GS Available Repetitive avalanche rated Q max. (nC) 29 g P-channel Q (nC) 5.4 gs Fast switching Available Q (nC) 15 Ease of paralleling gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 Note S * This datasheet provides information about parts that are 2 D PAK (TO-263) RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and D G cost-effectiveness. D S 2 The D PAK (TO-263) is a surface mount power package P-Channel MOSFET capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHF9630S-GE3 SiHF9630STRL-GE3 a IRF9630SPbF IRF9630STRLPbF Lead (Pb)-free a SiHF9630S-E3 SiHF9630STL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -200 DS V Gate-Source Voltage V 20 GS T = 25 C -6.5 C Continuous Drain Current V at -10 V I GS D T = 100 C -4.0 A C a Pulsed Drain Current I -26 DM Linear Derating Factor 0.59 W/C e Linear Derating Factor (PCB mount) 0.025 b Single Pulse Avalanche Energy E 500 mJ AS a Avalanche Current I -6.4 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C 74 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.0 A c Peak Diode Recovery dV/dt dV/dt -5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = -50 V, starting T = 25 C, L = 17 mH, R = 25 , I = -6.5 A (see fig. 12). DD J g AS c. I -6.5 A, dI/dt 120 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-0754-Rev. D, 02-May-16 Document Number: 91085 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9630S, SiHF9630S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = -250 A -200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.24 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = -160 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -3.9 A - - 0.80 DS(on) GS D b Forward Transconductance g V = -50 V, I = -3.9 A 2.8 - - S fs DS D Dynamic Input Capacitance C - 700 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 200- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -40- rss Total Gate Charge Q -- 29 g I = -6.5 A, V = -160 V, D DS Gate-Source Charge Q --V = -10 V 5.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --15 gd Turn-On Delay Time t -12 - d(on) Rise Time t -27 - r V = -100 V, I = -6.5 A, DD D ns b R = 12 , R = 15 , see fig. 10 Turn-Off Delay Time t -2g D 8- d(off) Fall Time t -24- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.6 - 3.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -6.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- -26 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = -6.5 A, V = 0 V -- -6.5 V SD J S GS Body Diode Reverse Recovery Time t - 200 300 ns rr b T = 25 C, I = -6.5 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.9 2.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. D, 02-May-16 Document Number: 91085 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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