IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount V (V) - 200 DS Available in Tape and Reel Dynamic dV/dt Rating R ( )V = - 10 V 3 DS(on) GS P-Channel Q (Max.) (nC) 11 g Fast Switching Q (nC) 7 gs Ease of Paralleling Q (nC) 4 Simple Drive Requirements gd Material categorization: For definitions of Configuration Single compliance please see www.vishay.com/doc 99912 S Note * Lead (Pb)-containing terminations are not RoHS-compliant. 2 D PAK (TO-263) Exemptions may apply. DESCRIPTION G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package D G D capable of accommodating die sizes up to HEX-4. It S provides the highest power capability and the lowest P-Channel MOSFET possible on-resistance in any existing surface mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. ORDERING INFORMATION 2 Package D PAK (TO-263) SiHF9610S-GE3 Lead (Pb)-free and Halogen-free SiHF9610STRR-GE3 SiHF9610STRL-GE3 IRF9610SPbF SiHF9610S-E3 Lead (Pb)-free IRF9610STRRPbF IRF9610STRLPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 200 DS V Gate-Source Voltage V 20 GS T = 25 C - 1.8 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 1 A C a Pulsed Drain Current I - 7 DM Linear Derating Factor 0.16 W/C d Linear Derating Factor (PCB Mount) 0.025 Maximum Power Dissipation T = 25 C 20 C P W D d Maximum Power Dissipation (PCB Mount) T = 25 C 3 A b Peak Diode Recovery dV/dt dV/dt - 5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C c Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 5). b. I - 1.8 A, dI/dt 70 A/s, V V , T 150 C. SD DD DS J c. 1.6 mm from case. d. When mounted on 1 square PCB (FR-4 or G-10 material). S12-1558-Rev. D, 02-Jul-12 Document Number: 91081 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -6.4 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.23 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - - 4 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 160 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 0.90 A -- 3 DS(on) GS D b Forward Transconductance g V = - 50 V, I = - 0.90 A 0.90 - - S fs DS D Dynamic Input Capacitance C - 170 - iss V = 0 V, GS Output Capacitance C -5V = - 25 V, 0- pF oss DS f = 1 MHz, see fig. 10 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 11 g I = - 3.5 A, V = - 160 V, D DS Gate-Source Charge Q --V = - 10 V 7 nC gs GS b see fig. 11 and 18 Gate-Drain Charge Q --4 gd Turn-On Delay Time t -8 - d(on) Rise Time t -15 - r V = - 100 V, I = - 0.90 A, DD D ns b R = 50 , R = 110 , see fig. 17 G D Turn-Off Delay Time t -1- d(off) Fall Time t -8- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 1.8 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- - 7 SM S b Body Diode Voltage V T = 25 C, I = - 1.8 A, V = 0 V -- - 5.8 V SD J S GS Body Diode Reverse Recovery Time t - 240 360 ns rr b T = 25 C, I = - 1.8 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.7 2.6 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 5). b. Pulse width 300 s duty cycle 2 %. S12-1558-Rev. D, 02-Jul-12 Document Number: 91081 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000