IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) - 200 DS Surface Mount R ( )V = - 10 V 1.5 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 22 g Dynamic dV/dt Rating P-Channel Q (nC) 12 gs Fast Switching Q (nC) 10 gd Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC S DESCRIPTION The Power MOSFETs technology is the key to Vishays 2 D PAK (TO-263) advanced line of Power MOSFET transistors. The efficient G geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It D G D provides the highest power capability and the lowest S possible on-resistance in any existing surface mount P-Channel MOSFET 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHF9620S-GE3 SiHF9620STRL-GE3 a IRF9620SPbF IRF9620STRLPbF Lead (Pb)-free a SiHF9620S-E3 SiHF9620STL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 200 DS V Gate-Source Voltage V 20 GS T = 25 C - 3.5 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 2.0 A C a Pulsed Drain Current I - 14 DM Linear Derating Factor 0.32 W/C e Linear Derating Factor (PCB Mount) 0.025 Inductive Current, Clamp I - 14 A LM Maximum Power Dissipation T = 25 C 40 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.0 A c Peak Diode Recovery dV/dt dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 5). b. Not Applicable c. I - 3.5 A, dI/dt 95 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91083 www.vishay.com S11-1051-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9620S, SiHF9620S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient R -- 62 thJA Maximum Junction-to-Ambient R -- 40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.1 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.22 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 160 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 1.5 A -- 1.5 DS(on) GS D Forward Transconductance g V = - 50 V, I = - 1.5 A 1.0 - - S fs DS D Dynamic Input Capacitance C - 350 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 100- pF oss DS f = 1.0 MHz, see fig. 10 Reverse Transfer Capacitance C -30- rss Total Gate Charge Q -- 22 g I = - 4.0 A, V = - 160 V, D DS Gate-Source Charge Q --V = - 10 V 12 nC gs GS b see fig. 11 and 18 Gate-Drain Charge Q --10 gd Turn-On Delay Time t -15 - d(on) Rise Time t -25 - r V = - 100 V, I = - 1.5 A, DD D ns b R = 50 , R = 67 , see fig. 17 G D Turn-Off Delay Time t -20- d(off) Fall Time t -15- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 3.5 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- - 14 SM S b Body Diode Voltage V T = 25 C, I = - 3.5 A, V = 0 V -- - 7.0 V SD J S GS Body Diode Reverse Recovery Time t - 300 450 ns rr b T = 25 C, I = - 3.5 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.9 2.9 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 5). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91083 2 S11-1051-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000