PD - 9.1525
IRF9Z34NS/L
HEXFET Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRF9Z34NS)
V = -55V
DSS
l Low-profile through-hole (IRF9Z34NL)
l 175C Operating Temperature
R = 0.10
DS(on)
l Fast Switching
G
l P-Channel
= -19A
I
D
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
The D Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
2
highest power capability and the lowest possible on-
D Pak TO-262
resistance in any existing surface mount package. The
2
D Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ -10V -19
D C GS
@ T = 100C Continuous Drain Current, V @ -10V -14 A
I
D C GS
I Pulsed Drain Current -68
DM
P @T = 25C Power Dissipation 3.8 W
D A
P @T = 25C Power Dissipation 68 W
D C
Linear Derating Factor 0.45 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 180 mJ
AS
I Avalanche Current -10 A
AR
E Repetitive Avalanche Energy 6.8 mJ
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
Operating Junction and -55 to + 175
T
J
T Storage Temperature Range
STG C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 2.2
JC
C/W
R Junction-to-Ambient ( PCB Mounted,steady-state)** 40
JA
8/25/97IRF9Z34NS/L
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient -0.05 V/C Reference to 25C, I = -1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 0.10 V = -10V, I = -10A
DS(on) GS D
V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A
GS(th) DS GS D
g Forward Transconductance 4.2 S V = -25V, I = -10A
fs DS D
-25 V = -55V, V = 0V
DS GS
I Drain-to-Source Leakage Current
A
DSS
-250 V = -44V, V = 0V, T = 150C
DS GS J
= 20V
Gate-to-Source Forward Leakage 100 VGS
I nA
GSS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Total Gate Charge 35 I = -10A
Qg D
Q Gate-to-Source Charge 7.9 nC V = -44V
gs DS
Q Gate-to-Drain Mille) Charge 16 V = -10V, See Fig. 6 and 13
gd GS
Turn-On Delay Time 13 V = -28V
td(on) DD
t Rise Time 55 I = -10A
r D
ns
Turn-Off Delay Time 30 R = 13
td(off) G
t Fall Time 41 R = 2.6, See Fig. 10
f D
Between lead,
L Internal Source Inductance
nH
S
7.5
and center of die contact
C Input Capacitance 620 V = 0V
iss GS
Output Capacitance 280 pF V = -25V
Coss DS
C Reverse Transfer Capacitance 140 = 1.0MHz, See Fig. 5
rss
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
Continuous Source Current MOSFET symbol
IS
-19
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
-68
(Body Diode) p-n junction diode.
S
V Diode Forward Voltage -1.6 V T = 25C, I = -10A, V = 0V
SD J S GS
t Reverse Recovery Time 54 82 ns T = 25C, I = -10A
rr J F
Q Reverse Recovery Charge 110 160 nC di/dt = -100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Notes:
Repetitive rating; pulse width limited by
Pulse width 300s; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
Uses IRF9Z34N data and test conditions
Starting T = 25C, L = 3.6mH
J
R = 25, I = -10A. (See Figure 12)
G AS
I -10A, di/dt -290A/s, V V ,
SD DD (BR)DSS
T 175C
J
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.