IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 60 DS Available Repetitive Avalanche Rated R ( )V = - 10 V 0.50 DS(on) GS RoHS* P-Channel Q (Max.) (nC) 12 g COMPLIANT 175 C Operating Temperature Q (nC) 3.8 gs Fast Switching Q (nC) 5.1 gd Ease of Paralleling Configuration Single Simple Drive Requirements S Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S D commercial-industrial applications at power dissipation G D levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z10PbF Lead (Pb)-free SiHF9Z10-E3 IRF9Z10 SnPb SiHF9Z10 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 6.7 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 4.7 A C a Pulsed Drain Current I - 27 DM Linear Derating Factor 0.29 W/C b Single Pulse Avalanche Energy E 140 mJ AS a Repetitive Avalanche Current I - 6.7 A AR a Repetitive Avalanche Energy E 4.3 mJ AR Maximum Power Dissipation T = 25 C P 43 W C D c Peak Diode Recovery dV/dt dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 6.23 mH, R = 25 , I = - 6.7 A (see fig. 12). DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90118 www.vishay.com S11-0511-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9Z10, SiHF9Z10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.060 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - GS(th) DS GS D - 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 60 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 48 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 4.0 A - - 0.50 DS(on) GS D b Forward Transconductance g V = - 25 V, I = - 4.0 A 1.4 - - fs DS D S Dynamic Input Capacitance C - 270 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -31- rss Total Gate Charge Q -- 12 g I = - 6.7 A, V = - 48 V, D DS Gate-Source Charge Q --V = - 10 V 3.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --5.1 gd Turn-On Delay Time t -11 - d(on) Rise Time t -63 - r V = - 30 V, I = - 6.7 A, DD D ns b R = 24 , R = 4.0, see fig. 10 g D Turn-Off Delay Time t -10- d(off) Fall Time t -31- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- - 6.7 S showing the A G integral reverse a Pulsed Diode Forward Current I S -- - 27 p - n junction diode SM b Body Diode Voltage V T = 25 C, I = - 6.7 A, V = 0 V -- - 5.5 V SD J S GS Body Diode Reverse Recovery Time t -80 160 ns rr b T = 25 C, I = - 6.7 A, dI/dt = 100 A/s J F - 0.096 0.19 Body Diode Reverse Recovery Charge Q rr C Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 90118 2 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000