X-On Electronics has gained recognition as a prominent supplier of IRF9Z10PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9Z10PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9Z10PBF Vishay

IRF9Z10PBF electronic component of Vishay
IRF9Z10PBF Vishay
IRF9Z10PBF MOSFETs
IRF9Z10PBF  Semiconductors

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See Product Specifications
Part No. IRF9Z10PBF
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 60 V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB
Datasheet: IRF9Z10PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.85 ea
Line Total: USD 1.85 
Availability - 2115
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2115
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.85
10 : USD 1.098
100 : USD 0.9097
500 : USD 0.7876
1000 : USD 0.7194
2000 : USD 0.6853
5000 : USD 0.6446

761
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 54
Multiples : 1
54 : USD 1.1966
100 : USD 1.1094
500 : USD 0.9046
1000 : USD 0.7294
2000 : USD 0.727
5000 : USD 0.7157

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF9Z10PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9Z10PBF and other electronic components in the MOSFETs category and beyond.

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IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 60 DS Available Repetitive Avalanche Rated R ( )V = - 10 V 0.50 DS(on) GS RoHS* P-Channel Q (Max.) (nC) 12 g COMPLIANT 175 C Operating Temperature Q (nC) 3.8 gs Fast Switching Q (nC) 5.1 gd Ease of Paralleling Configuration Single Simple Drive Requirements S Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S D commercial-industrial applications at power dissipation G D levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z10PbF Lead (Pb)-free SiHF9Z10-E3 IRF9Z10 SnPb SiHF9Z10 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 6.7 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 4.7 A C a Pulsed Drain Current I - 27 DM Linear Derating Factor 0.29 W/C b Single Pulse Avalanche Energy E 140 mJ AS a Repetitive Avalanche Current I - 6.7 A AR a Repetitive Avalanche Energy E 4.3 mJ AR Maximum Power Dissipation T = 25 C P 43 W C D c Peak Diode Recovery dV/dt dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 6.23 mH, R = 25 , I = - 6.7 A (see fig. 12). DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90118 www.vishay.com S11-0511-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF9Z10, SiHF9Z10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.060 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - GS(th) DS GS D - 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 60 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 48 V, V = 0 V, T = 150 C - - - 500 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = - 4.0 A - - 0.50 DS(on) GS D b Forward Transconductance g V = - 25 V, I = - 4.0 A 1.4 - - fs DS D S Dynamic Input Capacitance C - 270 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -31- rss Total Gate Charge Q -- 12 g I = - 6.7 A, V = - 48 V, D DS Gate-Source Charge Q --V = - 10 V 3.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --5.1 gd Turn-On Delay Time t -11 - d(on) Rise Time t -63 - r V = - 30 V, I = - 6.7 A, DD D ns b R = 24 , R = 4.0, see fig. 10 g D Turn-Off Delay Time t -10- d(off) Fall Time t -31- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- - 6.7 S showing the A G integral reverse a Pulsed Diode Forward Current I S -- - 27 p - n junction diode SM b Body Diode Voltage V T = 25 C, I = - 6.7 A, V = 0 V -- - 5.5 V SD J S GS Body Diode Reverse Recovery Time t -80 160 ns rr b T = 25 C, I = - 6.7 A, dI/dt = 100 A/s J F - 0.096 0.19 Body Diode Reverse Recovery Charge Q rr C Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 90118 2 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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