IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-channel versatility V (V) -50 DS Compact plastic package R ( )V = -10 V 0.28 DS(on) GS Fast switching Q max. (nC) 26 g Low drive current Q (nC) 6.2 gs Ease of paralleling Q (nC) 8.6 gd Excellent temperature stability Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S DESCRIPTION TO-220AB The power MOSFET technology is the key to Vishays advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET G design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-channel power MOSFETs are designed for S application which require the convenience of reverse D G D polarity operation. They retain all of the features of the more common N-channel power MOSFETs such as voltage P-Channel MOSFET control, very fast switching, ease of paralleling, and excellent temperature stability. P-channel power MOSFETs are intended for use in power stages where complementary symmetry with N-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9Z20PbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -50 DS V Gate-Source Voltage V 20 GS T = 25 C -9.7 C Continuous Drain Current V at - 10 V I GS D T = 100 C -6.1 A C a Pulsed Drain Current I -39 DM Linear Derating Factor 0.32 W/C Inductive Current, Clamped L = 100 H I -39 A LM Unclamped Inductive Current (Avalanche current) I -2.2 A L Maximum Power Dissipation T = 25 C P 40 W C D Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C c Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 14). b. V = - 25 V, starting T = 25 C, L =100 H, R = 25 DD J g c. 0.063 (1.6 mm) from case. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -80 thJA Case-to-Sink, Flat, Greased Surface R 1.0 - C/W thCS Maximum Junction-to-Case (Drain) R -3.1 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -50 - - V DS GS D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 500 nA GSS GS V = max. rating, V = 0 V - - -250 DS GS Zero Gate Voltage Drain Current I A DSS V = max. rating x 0,8, V = 0 V, T =125C - - -1000 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -5.6 A - 0.20 0.28 DS(on) GS D b Forward Transconductance g V = 2 x V , I = -5.6 A 2.3 3.5 - S fs DS GS DS Dynamic Input Capacitance C - 480 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 320- pF oss DS f = 1.0 MHz, see fig. 9 Reverse Transfer Capacitance C -58- rss Total Gate Charge Q -17 26 g I = -9.7 A, V = -0.8 max. D DS Gate-Source Charge Q -4V = -10 V .16.2 nC gs GS rating. see fig. 17 Gate-Drain Charge Q -5.78.6 gd Turn-On Delay Time t -8.2 12 d(on) V = -25 V, I = -9.7 A, DD D Rise Time t -57 86 r R = 18 , R = 2.4, see fig. 16 (MOSFET g D ns switching times are essentially independent Turn-Off Delay Time t -1218 d(off) of operating temperature) Fall Time t -2538 f D Internal Drain Inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D Continuous Source-Drain Diode Current I MOSFET symbol -- -9.7 S showing the A G a integral reverse Pulsed Diode Forward Current I -- -39 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = - 9.7 A, V = 0 V -- -6.3 V SD J S GS Body Diode Reverse Recovery Time t 56 110 280 ns rr b T = 25 C, I = - 9.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q 0.17 0.34 0.85 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width 300 s duty cycle 2 %. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000