X-On Electronics has gained recognition as a prominent supplier of IRF9Z20PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9Z20PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9Z20PBF Vishay

IRF9Z20PBF electronic component of Vishay
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See Product Specifications
Part No.IRF9Z20PBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P-Chan 50V 9.7 Amp
Datasheet: IRF9Z20PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.881 ea
Line Total: USD 1.88 
Availability - 1323
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1323
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.881
10 : USD 1.155
100 : USD 1.0736
250 : USD 1.0692
500 : USD 0.9361
1000 : USD 0.8866
5000 : USD 0.8481

   
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We are delighted to provide the IRF9Z20PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9Z20PBF and other electronic components in the MOSFETs category and beyond.

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IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-channel versatility V (V) -50 DS Compact plastic package R ( )V = -10 V 0.28 DS(on) GS Fast switching Q max. (nC) 26 g Low drive current Q (nC) 6.2 gs Ease of paralleling Q (nC) 8.6 gd Excellent temperature stability Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S DESCRIPTION TO-220AB The power MOSFET technology is the key to Vishays advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET G design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-channel power MOSFETs are designed for S application which require the convenience of reverse D G D polarity operation. They retain all of the features of the more common N-channel power MOSFETs such as voltage P-Channel MOSFET control, very fast switching, ease of paralleling, and excellent temperature stability. P-channel power MOSFETs are intended for use in power stages where complementary symmetry with N-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9Z20PbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -50 DS V Gate-Source Voltage V 20 GS T = 25 C -9.7 C Continuous Drain Current V at - 10 V I GS D T = 100 C -6.1 A C a Pulsed Drain Current I -39 DM Linear Derating Factor 0.32 W/C Inductive Current, Clamped L = 100 H I -39 A LM Unclamped Inductive Current (Avalanche current) I -2.2 A L Maximum Power Dissipation T = 25 C P 40 W C D Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C c Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 14). b. V = - 25 V, starting T = 25 C, L =100 H, R = 25 DD J g c. 0.063 (1.6 mm) from case. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9Z20, SiHF9Z20 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -80 thJA Case-to-Sink, Flat, Greased Surface R 1.0 - C/W thCS Maximum Junction-to-Case (Drain) R -3.1 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -50 - - V DS GS D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 500 nA GSS GS V = max. rating, V = 0 V - - -250 DS GS Zero Gate Voltage Drain Current I A DSS V = max. rating x 0,8, V = 0 V, T =125C - - -1000 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -5.6 A - 0.20 0.28 DS(on) GS D b Forward Transconductance g V = 2 x V , I = -5.6 A 2.3 3.5 - S fs DS GS DS Dynamic Input Capacitance C - 480 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 320- pF oss DS f = 1.0 MHz, see fig. 9 Reverse Transfer Capacitance C -58- rss Total Gate Charge Q -17 26 g I = -9.7 A, V = -0.8 max. D DS Gate-Source Charge Q -4V = -10 V .16.2 nC gs GS rating. see fig. 17 Gate-Drain Charge Q -5.78.6 gd Turn-On Delay Time t -8.2 12 d(on) V = -25 V, I = -9.7 A, DD D Rise Time t -57 86 r R = 18 , R = 2.4, see fig. 16 (MOSFET g D ns switching times are essentially independent Turn-Off Delay Time t -1218 d(off) of operating temperature) Fall Time t -2538 f D Internal Drain Inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D Continuous Source-Drain Diode Current I MOSFET symbol -- -9.7 S showing the A G a integral reverse Pulsed Diode Forward Current I -- -39 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = - 9.7 A, V = 0 V -- -6.3 V SD J S GS Body Diode Reverse Recovery Time t 56 110 280 ns rr b T = 25 C, I = - 9.7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q 0.17 0.34 0.85 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width 300 s duty cycle 2 %. S16-0015-Rev. C, 18-Jan-16 Document Number: 90121 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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