X-On Electronics has gained recognition as a prominent supplier of IRFB3306GPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB3306GPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB3306GPBF Infineon

Hot IRFB3306GPBF electronic component of Infineon
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Part No.IRFB3306GPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT 60V 160A 4.2mOhm 85nC
Datasheet: IRFB3306GPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8116 ea
Line Total: USD 0.81 
Availability - 832
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
832
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8116
10 : USD 0.7142
50 : USD 0.6662
100 : USD 0.6184
500 : USD 0.5897
1000 : USD 0.5744

673
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.1045
10 : USD 1.449
250 : USD 1.38
500 : USD 1.3225
1000 : USD 1.0695

970
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.0209

15
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 10
Multiples : 1
10 : USD 0.7713

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the IRFB3306GPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB3306GPBF and other electronic components in the MOSFETs category and beyond.

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PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications D V 60V DSS High Efficiency Synchronous Rectification in SMPS R typ. 3.3m DS(on) Uninterruptible Power Supply High Speed Power Switching max. 4.2m Hard Switched and High Frequency Circuits G I 160A D (Silicon Limited) I 120A D (Package Limited) S Benefits Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness Fully Characterized Capacitance and Avalanche SOA S Enhanced body diode dV/dt and dI/dt Capability D G Lead-Free TO-220AB Halogen-Free IRFB3306GPbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 160 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 110 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS I 620 DM Pulsed Drain Current P T = 25C W Maximum Power Dissipation 230 D C Linear Derating Factor 1.5 W/C V 20 V Gate-to-Source Voltage GS Peak Diode Recovery 14 dv/dt V/ns T -55 to + 175 J Operating Junction and T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 184 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R 62 JA Junction-to-Ambient, TO-220 www.irf.com 1 01/06/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.3 4.2 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.7 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 230 S V = 50V, I = 75A DS D Q Total Gate Charge 85 120 nC I = 75A g D Q Gate-to-Source Charge 20 V =30V gs DS Q Gate-to-Drain Mille) Charge 26 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 59 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 ns V = 30V d(on) DD t Rise Time 76 I = 75A r D t Turn-Off Delay Time 40 R = 2.7 d(off) G t Fall Time 77 V = 10V f GS C Input Capacitance 4520 pF V = 0V iss GS C Output Capacitance 500 V = 50V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5 rss C eff. (ER) Effective Output Capacitance (Energy Related) 720 V = 0V, V = 0V to 48V , See Fig. 11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 880 V = 0V, V = 0V to 48V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol 160 D S (Body Diode) showing the G I Pulsed Source Current 620 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 31 ns T = 25C V = 51V, rr J R 35 T = 125C I = 75A J F di/dt = 100A/s Q Reverse Recovery Charge 34 nC T = 25C rr J T = 125C 45 J I T = 25C Reverse Recovery Current 1.9 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 1400A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.04mH Jmax J R = 25, I = 96A, V =10V. Part not recommended for use GS G AS above this value. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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