X-On Electronics has gained recognition as a prominent supplier of IRFB3306GPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB3306GPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB3306GPBF Infineon

Hot IRFB3306GPBF electronic component of Infineon
Product Image X-ON
Product Image X-ON
Product Image X-ON

Images are for reference only
See Product Specifications
Part No.IRFB3306GPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT 60V 160A 4.2mOhm 85nC
Datasheet: IRFB3306GPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8116 ea
Line Total: USD 0.81 
Availability - 812
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
812
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8116
10 : USD 0.7142
50 : USD 0.6662
100 : USD 0.6184
500 : USD 0.5897
1000 : USD 0.5744

668
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.013
10 : USD 1.386
250 : USD 1.32
500 : USD 1.265
1000 : USD 1.023

947
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 354
Multiples : 1
354 : USD 1.3798
500 : USD 1.3212
1000 : USD 1.2477

15
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 0.7713

761
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 354
Multiples : 1
354 : USD 1.3798
500 : USD 1.3212
1000 : USD 1.2477

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFB3306GPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB3306GPBF and other electronic components in the MOSFETs category and beyond.

Image Part-Description
Stock Image AM29F080B-55EF
NOR Flash Parallel 5V 8M-bit 1M x 8 55ns 40-Pin TSOP
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image ATR2815S/CH
Module DC-DC 1-OUT 15V 2A 30W 10-Pin ATR
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 24VSHIELDBTT6030TOBO1
Power Management IC Development Tools 24V Switch Shield
Stock : 7
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 65DN06 ELEM
Infineon Technologies Rectifiers 600V 8.47KA
Stock : 1
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 6PS04512E43W39693
IGBT Modules STACKS IPM
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 6MS10017E41W36460
IGBT Modules STACKS IPM
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 2PS12017E44G35911
IGBT Modules STACKS IPM
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image 24VBATTSWITCHDEMO1
Power Management IC Development Tools The 24 V ADR Switch Demonstrator shows a semiconductor based solution of a 24 V battery master switch for trucks as required by the ADR regulation
Stock : 1
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image AHV2815DF/HBB
Module DC-DC 28VIN 2-OUT 15V/-15V 1.5A/-1.5A 15W 10-Pin AHV
Stock : 1
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image ACICBOARDTOBO1
Interface Development Tools
Stock : 2
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image NTTFS4928NTAG
N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Stock : 1
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image FDY3000NZ
Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
Stock : 4
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Hot Stock Image SI1330EDL-T1-E3
MOSFET 60V Vds 20V Vgs SC70-3
Stock : 1
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image SSM3J35AMFV,L3F
MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
Stock : 31583
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image RU30C8H
MOSFET N & P Trench 30V 8A,7A 2.4V @ 250uA 15 mΩ @ 8A,10V;25 mΩ @ 6A,10V SOP-8_150mil RoHS
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image TDM3466
MOSFET N Trench 40V 200A (Tc) 2.5V @ 250uA 2.1 mΩ @ 25A,10V TO-220 RoHS
Stock : 1
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image CRTD110N03L
MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image SI2102-TP
N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image LNG04R165
MOSFET N Channel 40V 39A(Tc) 2V @ 250uA 16.5mO @ 10A,10V TO-252 RoHS
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image HSBA3056
MOSFET N Channel 30V 73A 2.2V @ 250uA 3.9mΩ @ 20A,10V PRPAK5*6 RoHS
Stock : 2995
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

PD - 96211 IRFB3306GPbF HEXFET Power MOSFET Applications D V 60V DSS High Efficiency Synchronous Rectification in SMPS R typ. 3.3m DS(on) Uninterruptible Power Supply High Speed Power Switching max. 4.2m Hard Switched and High Frequency Circuits G I 160A D (Silicon Limited) I 120A D (Package Limited) S Benefits Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness Fully Characterized Capacitance and Avalanche SOA S Enhanced body diode dV/dt and dI/dt Capability D G Lead-Free TO-220AB Halogen-Free IRFB3306GPbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 160 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 110 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS I 620 DM Pulsed Drain Current P T = 25C W Maximum Power Dissipation 230 D C Linear Derating Factor 1.5 W/C V 20 V Gate-to-Source Voltage GS Peak Diode Recovery 14 dv/dt V/ns T -55 to + 175 J Operating Junction and T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 184 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R 62 JA Junction-to-Ambient, TO-220 www.irf.com 1 01/06/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.3 4.2 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.7 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 230 S V = 50V, I = 75A DS D Q Total Gate Charge 85 120 nC I = 75A g D Q Gate-to-Source Charge 20 V =30V gs DS Q Gate-to-Drain Mille) Charge 26 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 59 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 ns V = 30V d(on) DD t Rise Time 76 I = 75A r D t Turn-Off Delay Time 40 R = 2.7 d(off) G t Fall Time 77 V = 10V f GS C Input Capacitance 4520 pF V = 0V iss GS C Output Capacitance 500 V = 50V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5 rss C eff. (ER) Effective Output Capacitance (Energy Related) 720 V = 0V, V = 0V to 48V , See Fig. 11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 880 V = 0V, V = 0V to 48V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol 160 D S (Body Diode) showing the G I Pulsed Source Current 620 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 31 ns T = 25C V = 51V, rr J R 35 T = 125C I = 75A J F di/dt = 100A/s Q Reverse Recovery Charge 34 nC T = 25C rr J T = 125C 45 J I T = 25C Reverse Recovery Current 1.9 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 1400A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.04mH Jmax J R = 25, I = 96A, V =10V. Part not recommended for use GS G AS above this value. 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
2EHDRC-03P Pluggable Terminal Blocks In India, USA, Australia image

Oct 21, 2024
The 2EHDRC-03P Pluggable Terminal Block , manufactured by Dinkle and distributed by Xon Electronic , is a versatile solution for industrial automation, power distribution, and control systems. This 3-way closed-end header terminal block features a right-angle design with a 5.08 mm pitch , en
Understanding Optoelectronics: A Comprehensive Guide image

Jul 9, 2024
Optoelectronics, a fascinating and rapidly advancing field, combines the principles of optics and electronics to create devices that source, detect, and control light. This comprehensive guide delves into the fundamentals of optoelectronics, covering key components like LEDs, photodiodes, and lasers
Leading Supplier of 7201SYCQI Miniature Toggle Switches by C&K image

Nov 6, 2024
The 7201SYCQI Miniature Toggle Switch by C&K, available through Xon Electronics, is a compact, durable solution ideal for automotive, consumer electronics, industrial equipment, and telecommunications applications. As an SPDT switch, it offers reliable functionality in toggling circuits with a 5A c
254H-03 Headers & Wire Housings by Itek in India, USA image

Nov 19, 2024
The 254H-03 Headers & Wire Housings by Itek are reliable 3-way connectors with a 2.54mm pitch, perfect for creating secure electrical connections in various applications. Manufactured for industries worldwide, including the USA, India, Australia, and Europe, this component ensures efficient power d

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON Electronics
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronics Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing. All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted AS9120 Certified